Miika Mattinen
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View article: p-Type Al-Doped MoS<sub>2</sub> Nanosheet Films: Electronic and Chemical Interface Properties with Gold for Electronic Device Integration
p-Type Al-Doped MoS<sub>2</sub> Nanosheet Films: Electronic and Chemical Interface Properties with Gold for Electronic Device Integration Open
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View article: Atomic layer deposition of nickel sulfide thin films and their thermal and electrochemical stability
Atomic layer deposition of nickel sulfide thin films and their thermal and electrochemical stability Open
An atomic layer deposition process for NiS x thin films is developed. The deposited β-NiS films undergo structural and compositional changes during water splitting and high-temperature annealing.
View article: Dynamics of precatalyst conversion and iron incorporation in nickel-based alkaline oxygen evolution reaction catalysts
Dynamics of precatalyst conversion and iron incorporation in nickel-based alkaline oxygen evolution reaction catalysts Open
View article: Structural Aspects of MoS<sub><i>x</i></sub> Prepared by Atomic Layer Deposition for Hydrogen Evolution Reaction
Structural Aspects of MoS<sub><i>x</i></sub> Prepared by Atomic Layer Deposition for Hydrogen Evolution Reaction Open
Molybdenum sulfides (MoS x ) in both crystalline and amorphous forms are promising earth-abundant electrocatalysts for hydrogen evolution reaction (HER) in acid. Plasma-enhanced atomic layer deposition was used to prepare…
View article: Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide
Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide Open
Titaniumoxysulfide (TiO x S y ) is a technologically-relevant material for batteries, catalysis and, the area of our focus: photovoltaics. One of the key merits of TiO x S y is the wide range of electrical conductivity and optical absorpti…
View article: Electrochemical reduction of carbon dioxide to formate in a flow cell on CuSx grown by atomic layer deposition
Electrochemical reduction of carbon dioxide to formate in a flow cell on CuSx grown by atomic layer deposition Open
Funding Information: M.P. acknowledges funding from the Academy of Finland by the profiling action on Matter and Materials (grant no. 318913). M.S. and T.K. acknowledge funding from Jane and Aatos Erkko foundation (the USVA project). Dr. T…
View article: Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS<sub>2</sub> Thin Films at 150 °C
Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS<sub>2</sub> Thin Films at 150 °C Open
Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable methods capable of depositing MoS2 at low temperatures are scarce. Herein, we present a tool…
View article: MoS<sub>2</sub> Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier
MoS<sub>2</sub> Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier Open
Miniaturization in integrated circuits requires that the Cu diffusion barriers located in interconnects between the Cu metal line and the dielectric material should scale down. Replacing the conventional TaN with a 2D transition metal dich…
View article: Electrochemical Reduction of Co2 to Formic Acid in a Flow Cell on Cusx Grown by Atomic Layer Depoisiton
Electrochemical Reduction of Co2 to Formic Acid in a Flow Cell on Cusx Grown by Atomic Layer Depoisiton Open
View article: Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films
Conversion of ALD CuO Thin Films into Transparent Conductive p‐Type CuI Thin Films Open
Copper iodide (CuI) is a high‐performance p‐type transparent semiconductor that can be used in numerous applications, such as transistors, diodes, and solar cells. However, the lack of conformal and scalable methods to deposit CuI thin fil…
View article: CCDC 2180984: Experimental Crystal Structure Determination
CCDC 2180984: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …
View article: Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide
Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfide Open
In this work, atomic layer deposition (ALD) has been employed to prepare titanium oxysulfide (TiOxSy) thin films. Compositional control was achieved through a supercycle approach, where the ALD processes of TiOx and TiSx were interleaved. …
View article: Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry
Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry Open
Two-dimensional transition metal dichalcogenides, such as MoS2, are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant condi…
View article: Atomic layer deposition of GdF3 thin films
Atomic layer deposition of GdF3 thin films Open
Gadolinium fluoride is an attractive optical material with applications in, e.g., deep-UV lithography, solar cells, and medical imaging. Despite the interest toward this material, no atomic layer deposition (ALD) process has been published…
View article: Atomic layer deposition of PbCl<sub>2</sub>, PbBr<sub>2</sub> and mixed lead halide (Cl, Br, I) PbX<sub><i>n</i></sub>Y<sub>2−<i>n</i></sub> thin films
Atomic layer deposition of PbCl<sub>2</sub>, PbBr<sub>2</sub> and mixed lead halide (Cl, Br, I) PbX<sub><i>n</i></sub>Y<sub>2−<i>n</i></sub> thin films Open
We describe six new atomic layer deposition processes for PbCl 2 and PbBr 2 . Two processes deliver high quality uniform and conformal PbCl 2 and PbBr 2 thin films fit for semiconductor devices.
View article: Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films
Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films Open
This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 °C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromelliti…
View article: Atomic layer deposition of TbF3 thin films
Atomic layer deposition of TbF3 thin films Open
Lanthanide fluoride thin films have gained interest as materials for various optical applications, including electroluminescent displays and mid-IR lasers. However, the number of atomic layer deposition (ALD) processes for lanthanide fluor…
View article: Highly conductive and stable Co<sub>9</sub>S<sub>8</sub> thin films by atomic layer deposition: from process development and film characterization to selective and epitaxial growth
Highly conductive and stable Co<sub>9</sub>S<sub>8</sub> thin films by atomic layer deposition: from process development and film characterization to selective and epitaxial growth Open
A new ALD process using easily synthesized CoCl 2 (TMEDA) and H 2 S enables deposition of ultrathin, highly conductive and thermally stable Co 9 S 8 films selectively on SiO 2 without growth on Si–H.
View article: Atomic Layer Deposition of PbS Thin Films at Low Temperatures
Atomic Layer Deposition of PbS Thin Films at Low Temperatures Open
Lataa oa-julkaisu, kun saatavilla
View article: Controlling Atomic Layer Deposition of 2D Semiconductor SnS<sub>2</sub> by the Choice of Substrate
Controlling Atomic Layer Deposition of 2D Semiconductor SnS<sub>2</sub> by the Choice of Substrate Open
Semiconducting 2D materials, such as SnS 2 , hold great promise in a variety of applications including electronics, optoelectronics, and catalysis. However, their use is hindered by the scarcity of deposition methods offering necessary lev…
View article: Atomic Layer Deposition of Two-Dimensional Metal Dichalcogenides
Atomic Layer Deposition of Two-Dimensional Metal Dichalcogenides Open
Two-dimensional (2D) materials rank among the most scientifically exciting materials of the early 21st century. Transition metal dichalcogenides (TMDCs) have emerged into the spotlight due to the semiconducting nature of many TMDCs, which …
View article: Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditions
Van der Waals epitaxy of continuous thin films of 2D materials using atomic layer deposition in low temperature and low vacuum conditions Open
Van der Waals epitaxy holds great promise in producing high-quality films of 2D materials. However, scalable van der Waals epitaxy processes operating at low temperatures and low vacuum conditions are lacking. Herein, atomic layer depositi…
View article: Atomic Layer Deposition of Emerging 2D Semiconductors, HfS<sub>2</sub> and ZrS<sub>2</sub>, for Optoelectronics
Atomic Layer Deposition of Emerging 2D Semiconductors, HfS<sub>2</sub> and ZrS<sub>2</sub>, for Optoelectronics Open
Semiconducting two-dimensional (2D) materials are studied intensively because of their promising performance in diverse applications from electronics to energy storage and catalysis. Recently, HfS2 and ZrS2 have emerged as potential rivals…
View article: Atomic Layer Deposition of Photoconductive Cu<sub>2</sub>O Thin Films
Atomic Layer Deposition of Photoconductive Cu<sub>2</sub>O Thin Films Open
Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)2] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycr…
View article: Nickel Germanide Thin Films by Atomic Layer Deposition
Nickel Germanide Thin Films by Atomic Layer Deposition Open
This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD). The films were grown using NiCl2(tmpda) (tmpda = N,N,N',N',-tetramethyl-1,3-propanediamine) and tributylgermanium hydride serving as a …
View article: Review Article: Atomic layer deposition of optoelectronic materials
Review Article: Atomic layer deposition of optoelectronic materials Open
Optoelectronic materials can source, detect, and control light wavelengths ranging from gamma and x rays to ultraviolet, visible, and infrared regions. Optoelectronic devices are usually systems that transduce electricity to optical signal…
View article: Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl<sub>2</sub>(TMPDA) and Tert‐Butylhydrazine as Precursors
Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl<sub>2</sub>(TMPDA) and Tert‐Butylhydrazine as Precursors Open
This article describes the atomic layer deposition (ALD) of nickel nitride and nickel thin films using a diamine adduct of Ni(II) chloride, NiCl 2 (TMPDA) (TMPDA = N,N,N′,N′, ‐tetramethyl‐1,3‐propanediamine), as the metal precursor. Owing …
View article: Studies on solid state reactions of atomic layer deposited thin films of lithium carbonate with hafnia and zirconia
Studies on solid state reactions of atomic layer deposited thin films of lithium carbonate with hafnia and zirconia Open
In this paper, results on the solid state reactions of atomic layer deposited Li2CO3 with HfO2 and ZrO2 are reported. An Li2CO3 film was deposited on top of hafnia and zirconia, and the stacks were annealed at various temperatures in air t…
View article: Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing
Crystalline tungsten sulfide thin films by atomic layer deposition and mild annealing Open
Tungsten disulfide (WS2) is a semiconducting 2D material, which is gaining increasing attention in the wake of graphene and MoS2 owing to its exciting properties and promising performance in a multitude of applications. Herein, the authors…
View article: Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition
Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition Open
The authors demonstrate multilayer epitaxial films by atomic layer deposition and postdeposition annealing. Their example features two ABO3 type perovskite oxide films with different materials properties—a conductor (LaNiO3) and an insulat…