Miles Lindquist
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View article: Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed
Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed Open
This article presents a real-time nonlinear vector network analyzer (NVNA) testbed that enables the acquisition of the isothermal transient response of GaN HEMTs operating in pulsed class-B mode with arbitrary loads. An oscilloscope-based …
View article: RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band Open
We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two barrier alloys-a ternary of ScAlN and a quaternary of ScAlGaN. The active…
View article: Pulsed Power Performance of <i>β</i>-Ga₂O₃ MOSFETs at L-Band
Pulsed Power Performance of <i>β</i>-Ga₂O₃ MOSFETs at L-Band Open
DC, small, and large signal results are shown under continuous wave and pulsed conditions for a β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistor operating at 1 and 2 GHz. The device has a maximum transducer gain, maximum output…
View article: Self-Heating Characterization of $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography
Self-Heating Characterization of $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography Open
β-Ga 2 O 3 thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study selfheating effects in the MOSFET channel. The device was analyzed over a large temperature range…
View article: Lateral β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors
Lateral β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors Open
Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap semiconductor with disruptive potential for ultra-low power loss, high-efficiency power applications. The critical field strength is the key enabling material parameter of BG…
View article: Thin channel β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs with self-aligned refractory metal gates
Thin channel β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs with self-aligned refractory metal gates Open
We report the first demonstration of self-aligned gate (SAG) β -Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is…
View article: Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts
Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts Open
The difficulty of processing two-dimensional (2D) transition metal dichalcogenide (TMD) materials into working devices with any scalability is one of the largest impediments to capitalizing on their industrial promise. Here, we describe a …
View article: ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance Open
We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template on a 4-in 4H-SiC substrate by molecular beam epitaxy. The sheet resistance was me…
View article: Monolayers: Concurrent Growth and Formation of Electrically Contacted Monolayer Transition Metal Dichalcogenides on Bulk Metallic Patterns (Adv. Mater. Interfaces 4/2017)
Monolayers: Concurrent Growth and Formation of Electrically Contacted Monolayer Transition Metal Dichalcogenides on Bulk Metallic Patterns (Adv. Mater. Interfaces 4/2017) Open
A chemical vapor deposition process resulting in self-contacted as-grown 2D materials-based devices is described by Eric Stinaff and co-workers. The center of the cover shows an as-grown MoS2 based photodiode device. Clockwise, the top fou…