Minh Tuan Dau
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View article: III-nitride semiconductors are more flexible than other compound semiconductors for integrated photonics and efficient nonlinear interactions
III-nitride semiconductors are more flexible than other compound semiconductors for integrated photonics and efficient nonlinear interactions Open
International audience
View article: Perspectives for III-nitride photonic platforms
Perspectives for III-nitride photonic platforms Open
The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons…
View article: New approach for the molecular beam epitaxy growth of scalable WSe <sub>2</sub> monolayers
New approach for the molecular beam epitaxy growth of scalable WSe <sub>2</sub> monolayers Open
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe 2 on 15 × 15 mm large mica in the van d…
View article: Charge transfers and charged defects in WSe <sub>2</sub> /graphene-SiC interfaces
Charge transfers and charged defects in WSe <sub>2</sub> /graphene-SiC interfaces Open
We report on Kelvin probe force microscopy (KPFM) and density functional theory (DFT) investigations of charge transfers in vertical heterojunctions between tungsten diselenide (WSe 2 ) layers and graphene on silicon carbide substrates. Th…
View article: Preliminary Study on the Magnetic Properties of GeMn Nanocolumn/Ge Multilayers
Preliminary Study on the Magnetic Properties of GeMn Nanocolumn/Ge Multilayers Open
Ge0.94Mn0.06 nanocolumn thin film is a unique phase of GeMn diluted magnetic semiconductors (DMS) which exhibit Curie temperature (TC) > 400 K. The multilayers of Ge0.94Mn0.06 nanocolumns separated by nano-scaled spacers represent great in…
View article: New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers
New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers Open
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm large WSe$_2$ on m…
View article: Van der Waals epitaxy of Mn-doped MoSe$_2$ on mica
Van der Waals epitaxy of Mn-doped MoSe$_2$ on mica Open
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We repor…
View article: van der Waals epitaxy of Mn-doped MoSe2 on mica
van der Waals epitaxy of Mn-doped MoSe2 on mica Open
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We repor…
View article: Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films
Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films Open
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a l…
View article: Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning
Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning Open
International audience
View article: Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance Open
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe2 grows in a scalable manner on t…