Anwar Jarndal
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View article: A Simple Reconfigurable Antenna with Polarization Agility in Three Frequency Bands: Design, Simulation and Numerical Validation
A Simple Reconfigurable Antenna with Polarization Agility in Three Frequency Bands: Design, Simulation and Numerical Validation Open
In this paper, a simple reconfigurable antenna with polarization agility across three switchable frequency bands is proposed and rigorously modeled using two full‐wave electromagnetic solvers. The simulation results confirm that the antenn…
View article: Seamless metamaterial integration into slotted resonators for compact high-performance near-field wireless power transfer system design
Seamless metamaterial integration into slotted resonators for compact high-performance near-field wireless power transfer system design Open
This paper presents a novel design concept for near-field wireless power transfer (WPT) systems that leverages the seamless integration of metamaterials (MTMs) into slotted resonators. This approach enhances magnetic field ( $$\textbf{B}$$…
View article: On the temperature-dependence characterization and modeling of GaN HEMTs
On the temperature-dependence characterization and modeling of GaN HEMTs Open
Thermal effects present a major challenge for all semiconductor devices, especially high-power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures significantly impact the dev…
View article: A Comprehensive Investigation on Temperature‐Dependent Small‐Signal Characterization and Modeling of GaN HEMT on Si Substrate
A Comprehensive Investigation on Temperature‐Dependent Small‐Signal Characterization and Modeling of GaN HEMT on Si Substrate Open
Thermal effects represent a major challenge for all semiconductor devices, particularly high‐power transistors such as GaN High Electron Mobility Transistors (HEMTs). The combined internal and external temperatures have a significant impac…
View article: A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors
A Gray-Box Equivalent Neural Network Circuit Small-Signal Modeling Applied to GaN Transistors Open
Efficient transistor modeling is an essential step toward improved fabrication processes and reliable circuit design. This places more pressure on the model developer to consider the physical relevance, accuracy, and simulation convergence…
View article: A Novel LSTM Architecture for Automatic Modulation Recognition: Comparative Analysis With Conventional Machine Learning and RNN-Based Approaches
A Novel LSTM Architecture for Automatic Modulation Recognition: Comparative Analysis With Conventional Machine Learning and RNN-Based Approaches Open
The recognition of modulation types in received signals is essential for signal detection and demodulation, with broad applications in telecommunications, defense, and wireless communications. This paper introduces a pioneering approach to…
View article: Attention-Enhanced Hybrid Automatic Modulation Classification for Advanced Wireless Communication Systems: A Deep Learning-Transformer Framework
Attention-Enhanced Hybrid Automatic Modulation Classification for Advanced Wireless Communication Systems: A Deep Learning-Transformer Framework Open
The advancement of wireless communication toward beyond fifth-generation (B5G) and sixth-generation (6G) standards demands intelligent and scalable signal processing capable of accurate modulation classification under dynamic and noisy cha…
View article: High-Precision and Robust DNN Model for Predicting Quality Factor of WPT-Oriented Slotted Ground Resonators
High-Precision and Robust DNN Model for Predicting Quality Factor of WPT-Oriented Slotted Ground Resonators Open
Machine learning (ML) has emerged as an effective approach for optimizing circuit design and bringing a paradigm shift in the development of wireless power transfer (WPT) systems. Being the main building blocks of near-field WPT, the slott…
View article: A Real-Time Vision Transformers-Based System for Enhanced Driver Drowsiness Detection and Vehicle Safety
A Real-Time Vision Transformers-Based System for Enhanced Driver Drowsiness Detection and Vehicle Safety Open
Drowsy driving is a leading cause of fatal traffic accidents worldwide. Drowsy driving has emerged from modern societal trends such as long working hours, heavy reliance on vehicles, and insufficient sleep. Despite considerable efforts by …
View article: Development of Drivers’ Psychophysiological State Detection Measures and Relevant Machine Learning Methods
Development of Drivers’ Psychophysiological State Detection Measures and Relevant Machine Learning Methods Open
Driver impairment is yet another human factor that is likely to cause dangerous driving behavior (aka distracted driving), leading to safety hazards on the roads.Assuring acceptable drivers' cognitive state can improve safe driving perform…
View article: Wideband 5G Antenna Gain Enhancement Using a Compact Single-Layer Millimeter Wave Metamaterial Lens
Wideband 5G Antenna Gain Enhancement Using a Compact Single-Layer Millimeter Wave Metamaterial Lens Open
This paper presents a very compact, wideband, and enhanced-gain antenna for 5G applications. A simple single-layer millimeter wave (mm-wave) metamaterial lens (meta-lens) is used to improve the gain, aperture efficiency, and gain bandwidth…
View article: Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs
Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs Open
Artificial Neural Network (ANN) is frequently utilized for the development of behavioral models of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). However, exhaustive investigation concerning the ANN algorithms implemente…
View article: Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs
Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs Open
This article presents accurate, efficient and reliable small-signal model parameter extraction approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Firstly, a scanning-based systematic model parameter extra…
View article: Remote Monitoring Device for People Under Self-Quarantine Due to COVID-19
Remote Monitoring Device for People Under Self-Quarantine Due to COVID-19 Open
The COVID-19 pandemic has caused mass overcrowding in hospitals worldwide. Overcrowding leads to lower care standards and increase in the risk of infection on the hospital staff. The goal of this research paper is to design a low-cost remo…
View article: Design and Implementation of Portable Emergency Ventilator for COVID-19 Patients
Design and Implementation of Portable Emergency Ventilator for COVID-19 Patients Open
The COVID-19 pandemic has led to overwhelming number of patients in numerous hospitals, clinics, and healthcare facilities resulting in a severe shortage of crucial medical equipment known as the ventilator. The ventilator is extremely nec…
View article: Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT Open
In this paper, the impact of AlGaN barrier thickness () and substrate leakage on the noise conductance and noise figure in GaN High Electron Mobility Transistor (HEMT) is investigated. The investigation and analysis in this paper are targe…
View article: Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions
Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions Open
The purpose of this experimental study is to evaluate quantitatively the impact of the temperature on the behavior of various high electron-mobility transistor (HEMT) technologies through the analysis of the DC and RF transconductance. The…
View article: On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression
On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression Open
Machine learning‐based efficient temperature‐dependent small‐signal modelling approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors here. The first method is an artificial neural network (ANN)‐based and…
View article: Modelling of GaN high electron mobility transistor on diamond substrate
Modelling of GaN high electron mobility transistor on diamond substrate Open
A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasis…
View article: An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation Open
In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targe…
View article: Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors
Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors Open
In this paper an improved Gray-Wolf-Optimization (GWO) based small-signal modeling is developed. The proposed method is demonstrated by modeling GaN High Electron Mobility Transistors (HEMTs) on SiC and Diamond substrates. The technique ba…
View article: On the Usefulness of Pre-processing Methods in Rotating Machines Faults Classification using Artificial Neural Network
On the Usefulness of Pre-processing Methods in Rotating Machines Faults Classification using Artificial Neural Network Open
This work presents a multi-fault classification system using artificial neural network (ANN) to distinguish between different faults in rotating machines automatically. Rotation frequency and statistical features, including mean, entropy, …
View article: Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches
Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches Open
This article presents an extensive study and demonstration of efficient electrothermal large-signal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm (GA) with Artificial Neural Networks (ANN), and Particle Swa…
View article: On Neural Networks Based Electrothermal Modeling of GaN Devices
On Neural Networks Based Electrothermal Modeling of GaN Devices Open
This paper presents an efficient artificial neural network (ANN) electrothermal modeling approach applied to GaN devices. The proposed method is based on decomposing the device nonlinearity into intrinsic trapping-induced and thermal-induc…
View article: Compact GaN class‐AB Armstrong oscillator for resonant wireless power transfer
Compact GaN class‐AB Armstrong oscillator for resonant wireless power transfer Open
In this study, a 4.4 MHz wireless power transfer (WPT) system was designed and implemented using a class‐AB Armstrong oscillator that uses a packaged GaN on Si high electron mobility transistor. The oscillator is designed and simulated in …
View article: GaN high electron mobility transistors: a review from parasitic elements extraction's perspective
GaN high electron mobility transistors: a review from parasitic elements extraction's perspective Open
In this study, three different parameter extraction approaches for GaN high electron mobility transistors are presented and evaluated. The first approach depends on only cold pinch‐off measurements, the second approach based on cold pinch‐…
View article: Fractional-Order Modeling Of Gan High Electron Mobility Transistors For Switching Applications
Fractional-Order Modeling Of Gan High Electron Mobility Transistors For Switching Applications Open
In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device me…
View article: A Genetic-Neural-Network Modeling Approach For Self-Heating In Gan High Electron Mobility Transistors
A Genetic-Neural-Network Modeling Approach For Self-Heating In Gan High Electron Mobility Transistors Open
In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-param…
View article: Smart Home System for Energy Saving using Genetic- Fuzzy-Neural Networks Approach
Smart Home System for Energy Saving using Genetic- Fuzzy-Neural Networks Approach Open
Home energy saving is very important to realize sustainable improvement. This can be achieved by designing a smart home system that provides a productive and cost-effective environment through optimization of different factors that will be…