Mona A. Ebrish
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View article: Micro-transfer printing of GaN HEMTs on engineered substrates for use in harsh environments
Micro-transfer printing of GaN HEMTs on engineered substrates for use in harsh environments Open
Heterogeneous integration of gallium nitride (GaN) devices is essential to overcome the intrinsic material limitations in advanced electronics. For the successful incorporation of an integration technique into industry, a highly scalable p…
View article: Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion
Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion Open
Achieving high p -type doping levels selectively in gallium nitride (GaN) is a nontrivial task. In this work, we present a method for diffusing Mg from a finite source into the GaN layer, creating a highly doped layer with Mg without the n…
View article: Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy
Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy Open
In this work, we evaluate the quality of a commercially available GaN/AlGaN structure grown on Qromis Substrate Technology using Raman spectroscopy. Using the shift of the E2H peak, we calculated that initially this GaN structure has a low…
View article: Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design
Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design Open
GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full p…
View article: Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes
Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes Open
Foundry compatible vertical GaN PiN diodes were fabricated. The devices investigated in this work are based on 8 um drift layer thickness to achieve ∼1.2 kV of voltage blocking. Three different anode doping levels were fabricated on three …
View article: Using machine learning with optical profilometry for GaN wafer screening
Using machine learning with optical profilometry for GaN wafer screening Open
To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs r…
View article: Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination
Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination Open
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage a…
View article: Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques Open
To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy…
View article: 12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes
12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes Open
In this work, we report GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed to achieve low contact resistance of 0.75 Ω · mm, avoiding the …
View article: Using Long Range Optical Techniques to Predict Vertical GaN Diode Performance.
Using Long Range Optical Techniques to Predict Vertical GaN Diode Performance. Open
extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices…
View article: Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments Open
Plasma etching of p-type GaN creates n-type nitrogen vacancy (VN) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage…
View article: p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing Open
We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is imp…
View article: A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes
A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes Open
GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact o…
View article: Capacitive Sensing of Intercalated H<sub>2</sub>O Molecules Using Graphene
Capacitive Sensing of Intercalated H<sub>2</sub>O Molecules Using Graphene Open
Understanding the interactions of ambient molecules with graphene and adjacent dielectrics is of fundamental importance for a range of graphene-based devices, particularly sensors, where such interactions could influence the operation of t…
View article: Graphene Quantum Capacitance Varactors
Graphene Quantum Capacitance Varactors Open
University of Minnesota Ph.D. dissertation. March 2015. Major: Electrical Engineering. Advisor: Steven Koester. 1 computer file (PDF); viii, 168 pages.