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View article: Ion-Induced Charge and Single-Event Burnout in Silicon Power UMOSFETs
Ion-Induced Charge and Single-Event Burnout in Silicon Power UMOSFETs Open
The U-shaped Metal-Oxide-Semiconductor Field-Effect Transistor (UMOS or trench FET) is one of the most widely used semiconductor power devices worldwide, increasingly replacing the traditional vertical double-diffused MOSFET (DMOSFET) in v…
View article: Uncertainty minimization in electronic stopping cross-section measurements using the backscattering method
Uncertainty minimization in electronic stopping cross-section measurements using the backscattering method Open
Accurate determination of electronic stopping cross sections is critical for ion beam analysis and related applications. While transmission methods are well established, backscattering approaches remain less explored from a metrological pe…
View article: Status of the NUMEN Construction
Status of the NUMEN Construction Open
The NUMEN (NUclear Matrix Elements for Neutrinoless double beta decay) project at INFN-Laboratori Nazionali del Sud aims to extract quantitative information on the Nuclear Matrix Elements relevant to neutrinoless double beta decay, a key p…
View article: Neutron-Induced Radiation Effects in UMOS Transistor
Neutron-Induced Radiation Effects in UMOS Transistor Open
Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported f…
View article: Isomeric state in the odd-odd <sup>68</sup>Ga nucleus
Isomeric state in the odd-odd <sup>68</sup>Ga nucleus Open
The half life of the 7 − isomeric state of the odd-odd 68 Ga nucleus was measured using a particle-γ delayed coincidence technique. The 68 Ga nuclei were produced using the fusion-evaporation reaction 55 Mn( 16 O,2pn) 68 Ga at 55 MeV incid…
View article: Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions
Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions Open
This work presents results of three distinct radiation tests performed upon a fault-tolerant data acquisition system comprising a design diversity redundancy technique. The first and second experiments are Total Ionizing Dose (TID) essays,…
View article: Robust Convolutional Neural Networks in SRAM-based FPGAs: a Case Study in Image Classification
Robust Convolutional Neural Networks in SRAM-based FPGAs: a Case Study in Image Classification Open
This work discusses the main aspects of vulnerability and degradation of accuracy of an image classification engine implemented into SRAM-based FPGAs under faults. The image classification engine is an all-convolutional neural-network (CNN…
View article: Determination of stable isotope ratios using nuclear reaction analysis coupled with a particle–gamma coincidence method
Determination of stable isotope ratios using nuclear reaction analysis coupled with a particle–gamma coincidence method Open
This study presents an alternative method to determine isotope ratios using a medium energy accelerator and simultaneously measuring the charged particles and gamma-rays produced in a nuclear reaction.
View article: Evaluating Soft Core RISC-V Processor in SRAM-Based FPGA Under Radiation Effects
Evaluating Soft Core RISC-V Processor in SRAM-Based FPGA Under Radiation Effects Open
This article evaluates the RISC-V Rocket processor embedded in a Commercial Off-The-Shelf (COTS) SRAM-based field-programmable gate array (FPGA) under heavy-ions-induced faults and emulation fault injection. We also analyze the efficiency …
View article: SAFIIRA: A heavy-ion multi-purpose irradiation facility in Brazil
SAFIIRA: A heavy-ion multi-purpose irradiation facility in Brazil Open
This work describes the new facility for applied nuclear physics at the University of Sao Paulo, mainly for irradiation of electronic devices. It is a setup composed of a quadrupole doublet for beam focusing/defocusing plus multiple scatte…
View article: Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits
Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits Open
International standards have been proposed and used to test Integrated Circuits (ICs) for Total-Ionizing Dose (TID) and Single-Event Upset (SEU) as well as for Electromagnetic Interference (EMI). Nevertheless, these standards are separatel…
View article: Thermal neutron induced upsets in 28nm SRAM
Thermal neutron induced upsets in 28nm SRAM Open
In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was …
View article: Elastic scattering and total reaction cross sections for the <sup>12</sup>B+<sup>58</sup>Ni system
Elastic scattering and total reaction cross sections for the <sup>12</sup>B+<sup>58</sup>Ni system Open
Angular distributions for elastic scattering of radioactive 12B projectile on 58Ni target have been measured for the first time. They were obtained at two energies, ELab = 30.0 and 33.0 MeV, close to the Coulomb barrier. These angular dist…
View article: A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices
A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices Open
In this work, we present a facility to study errors in digital devices exposed to thermal neutrons from a beam hole in the IEA-R1 nuclear reactor, as well as the long-lived isotopes produced in the irradiation of digital electronic devices…
View article: Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs Open
MOSFETs are subject to different types of Single-Event Effects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive effects, such as Single-Event Transients, than high-voltage MOSFETs which may a…
View article: Lockstep Dual-Core ARM A9: Implementation and Resilience Analysis Under Heavy Ion-Induced Soft Errors
Lockstep Dual-Core ARM A9: Implementation and Resilience Analysis Under Heavy Ion-Induced Soft Errors Open
This paper presents a dual-core lockstep (DCLS) implementation to protect hard-core processors against radiation-induced soft errors. The proposed DCLS is applied to an Advanced RISC Machine Cortex-A9 embedded processor. Different software…
View article: Reliability–Performance Analysis of Hardware and Software Co-Designs in SRAM-Based APSoCs
Reliability–Performance Analysis of Hardware and Software Co-Designs in SRAM-Based APSoCs Open
All programmable system-on-chip (APSoC) devices provide higher system performance and programmable flexibility at lower costs compared to standalone field-programmable gate array devices and processors. Unfortunately, it has been demonstra…
View article: Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA Open
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View article: Experimental Setups for Single Event Effect Studies
Experimental Setups for Single Event Effect Studies Open
Experimental setups are being prepared to test and to qualify electronic devices regarding their tolerance to Single Event Effect (SEE). A multiple test setup and a new beam line developed especially for SEE studies at the São Paulo 8 UD P…
View article: Traceable stopping cross sections of Al and Mo elemental targets for 0.9–3.6-MeV protons
Traceable stopping cross sections of Al and Mo elemental targets for 0.9–3.6-MeV protons Open
Accurate knowledge about the energy loss of ions in matter is essential in many problems, ranging from fundamental to applied nuclear physics. Indeed, there is a recent and increasing demand for new data on stopping cross sections measured…
View article: Large areas elemental mapping by ion beam analysis techniques
Large areas elemental mapping by ion beam analysis techniques Open
The external beam line of the Laboratory for Material Analysis with Ion Beams (LAMFI) is a versatile setup for multi-technique analysis. X-ray detectors for Particle Induced X-rays Emission (PIXE) measurements, a Gamma-ray detector for Par…
View article: A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector
A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector Open
Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small detection volume, fast readout, portability, low power consumption a…
View article: A New Test Environment Approach to SEE Detection in MOSFETs
A New Test Environment Approach to SEE Detection in MOSFETs Open
This paper shows a comparison between two different MOSFET structures: a conventional layout (CM) and Diamond (DM - enclosed layout transistor), as tolerance to the Single Event effect - SEE. Both CMOS 0.35μm technology devices types have …
View article: Measurement of fusion cross sections for sup(16)O+sup(16)(O)
Measurement of fusion cross sections for sup(16)O+sup(16)(O) Open
Submitted by Claudinei Pracidelli ([email protected]) on 2015-07-23T13:28:32Z
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