N. Armani
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View article: Step-Graded III–V Metamorphic Buffers on Ge for High-Efficiency Photovoltaics: Investigation of Strain Relaxation and Morphology Evolution
Step-Graded III–V Metamorphic Buffers on Ge for High-Efficiency Photovoltaics: Investigation of Strain Relaxation and Morphology Evolution Open
This work is motivated by the need to enhance efficiency and radiation resistance and reduce weight in high-performance photovoltaic devices, with applications spanning both terrestrial and space environments. Metamorphic buffers are key e…
View article: All MOVPE Grown Quadruple Junction InGaP/InGaAs/Ge/Ge Solar Cell
All MOVPE Grown Quadruple Junction InGaP/InGaAs/Ge/Ge Solar Cell Open
Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell. Combining epitaxial germanium with III–V materials would enable the realization of…
View article: Electrical properties of CdTe:P single crystals at low and high temperatures
Electrical properties of CdTe:P single crystals at low and high temperatures Open
High-temperature (470-1170 K) properties of CdTe:P single crystals, grown by Bridgman technique, with an initial concentration of impurities in the melt 1×1019 at/cm3, were investigated by measuring of the Hall effect. Experimental results…
View article: Capabilities of Grazing Incidence X-ray Diffraction in the Investigation of Amorphous Mixed Oxides with Variable Composition
Capabilities of Grazing Incidence X-ray Diffraction in the Investigation of Amorphous Mixed Oxides with Variable Composition Open
X-ray Diffraction has been fully exploited as a probe to investigate crystalline materials. However, very little research has been carried out to unveil its potentialities towards amorphous materials. In this work, we demonstrated the capa…
View article: Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber
Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber Open
We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements…
View article: Results on MOVPE SiGeSn deposition for the monolithic integration of III-V and IV elements in multi-junction solar cells
Results on MOVPE SiGeSn deposition for the monolithic integration of III-V and IV elements in multi-junction solar cells Open
View article: New Results on SiGeSn MOVPE Grown for Multi-Junction Solar Cells
New Results on SiGeSn MOVPE Grown for Multi-Junction Solar Cells Open
New results concerning SiGeSn deposited by MOVPE in the same growth chamber utilized for III-V deposition are reported. The ternary material has been grown on 4 and 6 inch germanium wafers, tin precipitation free, at relatively high growth…
View article: MOVPE SiGeSn development for the next generation four junction solar cells
MOVPE SiGeSn development for the next generation four junction solar cells Open
The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic (CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult to be exp…
View article: Low Growth Temperature MOCVD InGaP for Multi-junction Solar Cells
Low Growth Temperature MOCVD InGaP for Multi-junction Solar Cells Open
In view of the realization of high efficiency four-junction solar cells, InGaP layers, lattice matched to InGaAs, and (001) 6° off Ge substrate are grown by low pressure MOCVD at growth temperatures as low as 500 °C. The grown samples are …