N. Daix
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View article: Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells Open
We present and thoroughly compare band-structures computed with density functional theory,
\ntight-binding, k p and non-parabolic effective mass models. Parameter sets for the non-parabolic C,
\nthe L and X valleys and intervalley bandgaps…
View article: Modeling approaches for band-structure calculation in III-V FET quantum wells
Modeling approaches for band-structure calculation in III-V FET quantum wells Open
We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thick…
View article: Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si Open
We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading …
View article: The 16,000‐event 2003–2004 earthquake swarm in Ubaye (French Alps)
The 16,000‐event 2003–2004 earthquake swarm in Ubaye (French Alps) Open
The Ubaye valley, one of the most active seismic zones in the French Alps, was visited in 2003–2004 by a prolific and protracted earthquake swarm with a maximum magnitude M L = 2.7. The seismic activity clustered along a 9‐km‐long, 3‐ to 8…