N. Khadar Basha
YOU?
Author Swipe
View article: A Novel L<sub>G</sub> = 40 nm AlN-GDC-HEMT on SiC Wafer With f<sub>T</sub>/I<sub>DS,peak</sub> of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers
A Novel L<sub>G</sub> = 40 nm AlN-GDC-HEMT on SiC Wafer With f<sub>T</sub>/I<sub>DS,peak</sub> of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers Open
In this work, we report the RF/DC performance of novel AlN/GaN/Graded-AlGaN/GaN double-channel HEMT (AlN-GDC-HEMT) on SiC wafer for the first time. The study compares the performance between conventional AlGaN/GaN/Graded-AlGaN/GaN double-c…
View article: Operating conditions analysis of memristor model
Operating conditions analysis of memristor model Open
The two terminal, fourth basic circuit element, memristor acts as nonlinear resistor with built-in memory functionality. Memristor has many advantages like non-volatile, no leakage current, Even when the power supply turn off, it retains i…