N. Pauc
YOU?
Author Swipe
View article: Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses
Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses Open
The structural properties of CVD-grown (Si)GeSn heterostructures were assessed thanks to scanning transmission electron microscopy at the nanometer scale. Quantitative energy dispersive x-ray (EDX) spectroscopy together with precession ele…
View article: Investigation of lasing in highly strained germanium at the crossover to direct band gap
Investigation of lasing in highly strained germanium at the crossover to direct band gap Open
Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
View article: Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications
Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications Open
High tensile strained Ge cavities in crossbeam are promising for the development of integrated laser sources on Si. However, the optimization of such cavities remains more challenging than the uniaxial beams. Indeed, the spatial distributi…
View article: Reversible Al Propagation in Si<sub><i>x</i></sub>Ge<sub>1–<i>x</i></sub> Nanowires: Implications for Electrical Contact Formation
Reversible Al Propagation in Si<sub><i>x</i></sub>Ge<sub>1–<i>x</i></sub> Nanowires: Implications for Electrical Contact Formation Open
While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid-state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopants int…
View article: Continuous wave lasing in strained germanium microbridge
Continuous wave lasing in strained germanium microbridge Open
International audience
View article: In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots
In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots Open
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if th…
View article: In-Situ Transmission Electron Microscopy Imaging of Aluminum Diffusion in Germanium Nanowires for the Fabrication of Sub-10 nm Ge Quantum Disks
In-Situ Transmission Electron Microscopy Imaging of Aluminum Diffusion in Germanium Nanowires for the Fabrication of Sub-10 nm Ge Quantum Disks Open
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if th…
View article: Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures
Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures Open
A silicon-based monolithic laser has long been desired. Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened up a completely new approach that is different from the traditional III-V integration on Si. In this …
View article: GeSn heterostructure micro-disk laser operating at 230 K
GeSn heterostructure micro-disk laser operating at 230 K Open
We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn 16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of misfit dislocations. The lasing wavelengths shifted from 2…
View article: Emerging optical gain in highly strained Germanium
Emerging optical gain in highly strained Germanium Open
Cavity mode analysis of photoluminescence spectra of uniaxial tensile stressed GeOI micro-bridges is shown. Several cavity modes show a strong increase of the Q-factor, which is signature of the emergent optical amplification due to gain.
View article: Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications Open
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mism…
View article: Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared\n photonic applications
Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared\n photonic applications Open
Adding sufficient tensile strain to Ge can turn the material to a direct\nbandgap group IV semiconductor emitting in the mid-infrared wavelength range.\nHowever, highly strained-Ge cannot be directly grown on Si due to its large\nlattice m…
View article: Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content Open
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain …
View article: Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress
Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress Open
The application of high values of strain to Ge considerably improves its light emission properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy is routinely used for strain measurements. Typical Raman-strai…
View article: Quantification of dopants in nanomaterial by <scp>SEM</scp> / <scp>EDS</scp>
Quantification of dopants in nanomaterial by <span>SEM</span> / <span>EDS</span> Open
It is long known that doping is a key element in the development of modern semiconductor technology for applications in electronic, nano‐electronics, optoelectronics and photonics. Doping allows modifications in the electrical conductivity…
View article: Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering Open
Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-d…
View article: Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain Open
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
View article: Lattice strain and tilt mapping in stressed Ge microstructures using\n X-ray Laue micro-diffraction and rainbow-filtering
Lattice strain and tilt mapping in stressed Ge microstructures using\n X-ray Laue micro-diffraction and rainbow-filtering Open
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction\nwere used to measure accurately the full strain tensor and the lattice\norientation distribution at the sub-micron scale in highly strained, suspended\nGe micro-de…
View article: Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers
Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers Open
International audience
View article: Uniaxially stressed germanium with fundamental direct band gap
Uniaxially stressed germanium with fundamental direct band gap Open
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensi…
View article: Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications Open
Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (…
View article: Radial photovoltaic junction with single Si nanowire core–shell structure
Radial photovoltaic junction with single Si nanowire core–shell structure Open
A single silicon nanowire core–shell structure has been elaborated. Technological stages of the process are presented. The device results in a P‐i‐N radial junction: the core is a P‐type silicon nanowire encapsulated in an intrinsic thin s…