Hieu Pham Trung Nguyen
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View article: Apply Six Sigma to Improve the Defect Rate at the Fiber Cable Manufacturing Company
Apply Six Sigma to Improve the Defect Rate at the Fiber Cable Manufacturing Company Open
Excellence in production activities is essential for creating high-quality products that fulfill customer requirements, thereby aiding any business in enhancing capacity, brand reputation, and sustainable development. Companies employ Six …
View article: Preface for Special Issue MNDCS-2024
Preface for Special Issue MNDCS-2024 Open
View article: Preface for the special issue MNDCS-2025
Preface for the special issue MNDCS-2025 Open
View article: A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation
A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation Open
In this work, the material characteristics of AlN and Ga 2 O 3 have been exploited to develop a high-performance, AlN/Ga 2 O 3 heterostructure semiconductor device to handle high-power and RF/microwave electronics applications of today’s r…
View article: Superlattice Structure for High Performance AlGaN Deep Ultraviolet LEDs
Superlattice Structure for High Performance AlGaN Deep Ultraviolet LEDs Open
This study presents a novel approach to mitigate electron overflow in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs) by integrating engineered quantum barriers (QBs) with a concave shape and an optimized AlGaN superlattice (SL) e…
View article: Lattice heat flow thermal modeling of recessed bridge-gate InAlGaN/GaN HEMT
Lattice heat flow thermal modeling of recessed bridge-gate InAlGaN/GaN HEMT Open
In this article, a novel recessed bridge-gate engineered quaternary In x Al y Ga 1-x-y N/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron g…
View article: Applying DMAIC Method in Six Sigma to Improve Productivity: A Case Study at a Fabric Manufacturing Company
Applying DMAIC Method in Six Sigma to Improve Productivity: A Case Study at a Fabric Manufacturing Company Open
This study aims to analyse the root causes of fabric creases in a company specialising in Denim production to reduce defect rates and increase productivity. The project team applied Six Sigma and DMAIC method to achieve the research object…
View article: Advancements in Structural Design for Enhanced Performance in AlGaN Deep Ultraviolet Micro-LEDs
Advancements in Structural Design for Enhanced Performance in AlGaN Deep Ultraviolet Micro-LEDs Open
This study presents a novel approach to mitigate electron overflow in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs) by integrating engineered quantum barriers (QBs) with concave shape and an optimized AlGaN superlattice (SL) ele…
View article: Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor
Lattice Heat Flow Thermal Modeling of Recessed Bridge-Gate InAlGaN/GaN High-Electron-Mobility Transistor Open
In this article, a novel recessed bridge-gate engineered quaternary InAlGaN/GaN HEMT is proposed for emerging electronics applications. The In content is fixed to 5% and Al content to 27.5% to create two-dimensional electron gas (2DEG) at …
View article: DIPG-50. TARGETING VULNERABILITIES IN PAEDIATRIC DIFFUSE MIDLINE GLIOMAS: LEVERAGING PLK1 INHIBITION TO EXPLOIT RAS/PI3K PATHWAY DEPENDENCY
DIPG-50. TARGETING VULNERABILITIES IN PAEDIATRIC DIFFUSE MIDLINE GLIOMAS: LEVERAGING PLK1 INHIBITION TO EXPLOIT RAS/PI3K PATHWAY DEPENDENCY Open
BACKGROUND Diffuse Midline Gliomas (DMGs), characterised by prevalent H3K27M mutations, exhibit epigenetic modifications that drive a proliferative state resistant to conventional therapies. The interplay of the cell cycle with PI3K and RA…
View article: Characteristics study of heterojunction III-nitride/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nano-HEMT for THz applications
Characteristics study of heterojunction III-nitride/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> nano-HEMT for THz applications Open
In this research study, a recessed gate III-Nitride high electron mobility transistor (HEMT) grown on a lattice matched β -Ga 2 O 3 substrate is designed. This research investigation aims to enhance DC and RF performance of AlGaN/GaN HEMT,…
View article: Realization of kink effect in the drain characteristics of III-nitride/β-Ga2O3 nano-HEMT due to traps and self-heating
Realization of kink effect in the drain characteristics of III-nitride/β-Ga2O3 nano-HEMT due to traps and self-heating Open
In this research article, a field-plated and recessed gate III-nitride Nao-HEMT grown on ?-Ga2O3 substrate is designed. The electrical characteristics of the proposed HEMT is investigated by using the thermal models of ATLAS TCAD simulatio…
View article: Thermal Droop Minimization and Enhanced Opto-Electronic Properties in Ingan/Gan Ga-Polar and N-Polar Tunnel Junction Nanowire Leds
Thermal Droop Minimization and Enhanced Opto-Electronic Properties in Ingan/Gan Ga-Polar and N-Polar Tunnel Junction Nanowire Leds Open
View article: Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence
Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence Open
In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineer…
View article: The role of indium composition in <scp>In<sub>x</sub>Ga<sub>1−x</sub>N</scp> prestrained layer towards optical characteristics of <scp>EBL</scp> free <scp>GaN</scp>/<scp>InGaN</scp> nanowire <scp>LEDs</scp> for enhanced luminescence
The role of indium composition in <span>In<sub>x</sub>Ga<sub>1−x</sub>N</span> prestrained layer towards optical characteristics of <span>EBL</span> free <span>GaN</span>/<span>InGaN</span> nanowire <span>LEDs</span> for enhanced luminescence Open
In this work, an electron blocking layer (EBL) free light emitting diode (LED) nanowire is proposed with alternate prestrained layers of In x Ga 1 − x N/GaN, which are inserted between the GaN/InGaN multi‐quantum wells (MQWs) and n‐GaN lay…
View article: Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications
Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications Open
In this research study, a recessed gate III-Nitride based nano high electron mobility transistor (HEMT) grown on a lattice matched β-Ga2O3 substrate is designed. This research investigation aims to enhance DC and RF p…
View article: Giant schwannoma on the lower leg: A case report and review of the literature
Giant schwannoma on the lower leg: A case report and review of the literature Open
View article: Encrypted Data Caching and Learning Framework for Robust Federated Learning-based Mobile Edge Computing
Encrypted Data Caching and Learning Framework for Robust Federated Learning-based Mobile Edge Computing Open
Federated Learning (FL) plays a pivotal role in enabling artificial intelligence (AI)-based mobile applications in mobile edge computing (MEC). However, due to the resource heterogeneity among participating mobile users (MUs), delayed upda…
View article: Encrypted Data Caching and Learning Framework for Robust Federated Learning-based Mobile Edge Computing
Encrypted Data Caching and Learning Framework for Robust Federated Learning-based Mobile Edge Computing Open
Federated Learning (FL) plays a pivotal role in enabling artificial intelligence (AI)-based mobile applications in mobile edge computing (MEC). However, due to the resource heterogeneity among participating mobile users (MUs), delayed upda…
View article: Dataset for identification of queerphobia
Dataset for identification of queerphobia Open
While social media platforms have implemented many algorithmic approaches to moderating hate speech, there is a lack of datasets on queerphobia which has impeded efforts to automatically recognize and moderate queerphobic hate speech onlin…
View article: ESWORD: Implementation of Wireless Jamming Attacks in a Real-World Emulated Network
ESWORD: Implementation of Wireless Jamming Attacks in a Real-World Emulated Network Open
Wireless jamming attacks have plagued wireless communication systems and will continue to do so going forward with technological advances. These attacks fall under the category of Electronic Warfare (EW), a continuously growing area in bot…
View article: Preclinical Evaluation of 89Zr-Panitumumab for Biology-Guided Radiation Therapy
Preclinical Evaluation of 89Zr-Panitumumab for Biology-Guided Radiation Therapy Open
View article: Highly Stable White Light Emission from III-Nitride Nanowire LEDs Utilizing Nanostructured Alumina-Doped Mn<sup>4+</sup> and Mg<sup>2+</sup>
Highly Stable White Light Emission from III-Nitride Nanowire LEDs Utilizing Nanostructured Alumina-Doped Mn<sup>4+</sup> and Mg<sup>2+</sup> Open
In this report, red-emitting alumina nanophosphors doped with Mn4+ and Mg2+ (Al2O3:Mn4+, Mg2+) are synthesized by a hydrothermal method using a Pluronic surfactant. The prep…
View article: TMS via temporal summation: high-frequency rTMS at subthreshold intensity induces suprathreshold motor response in rats
TMS via temporal summation: high-frequency rTMS at subthreshold intensity induces suprathreshold motor response in rats Open
View article: P521: Application of long read whole genome sequencing to elucidate the molecular etiology of a patient with diagnostic odyssey
P521: Application of long read whole genome sequencing to elucidate the molecular etiology of a patient with diagnostic odyssey Open
View article: Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence
Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence Open
In this paper, an electron blocking layer (EBL) free GaN/AlGaN light emitting diode (LED) is designed using Atlas TCAD with graded composition in the quantum barriers of the active region. The device has a GaN buffer layer incorporated in …
View article: Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications
Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications Open
View article: Deep Variational Inverse Scattering
Deep Variational Inverse Scattering Open
Inverse medium scattering solvers generally reconstruct a single solution without an associated measure of uncertainty. This is true both for the classical iterative solvers and for the emerging deep learning methods. But ill-posedness and…
View article: Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 Substrate
Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 Substrate Open
In this article, the performance analysis of recessed gate and field-plated III-nitride Nano-HEMT (High Electron Mobility Transistor) developed on β-Ga O substrate with and without AlN spacer layer is studied. The two-dimensional electron …
View article: Evaluate Quantum Combinatorial Optimization for Distribution Network Reconfiguration
Evaluate Quantum Combinatorial Optimization for Distribution Network Reconfiguration Open
This paper aims to implement and evaluate the performance of quantum computing on solving combinatorial optimization problems arising from the operations of the power grid. To this end, we construct a novel mixed integer conic programming …