Nicholas A. Lanzillo
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View article: Half-Metallic Fe/MgO Superlattice: An Ideal Candidate for Magnetic Tunnel Junction Electrodes
Half-Metallic Fe/MgO Superlattice: An Ideal Candidate for Magnetic Tunnel Junction Electrodes Open
Magnetic Tunnel Junction (MTJ) based Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is poised to replace embedded Flash for advanced applications such as automotive microcontroller units. To achieve deeper technological adop…
View article: Surface-dominated conductance scaling in Weyl semimetal NbAs
Surface-dominated conductance scaling in Weyl semimetal NbAs Open
Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable advanced device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental und…
View article: Unconventional resistivity scaling in topological semimetal CoSi
Unconventional resistivity scaling in topological semimetal CoSi Open
Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may h…
View article: Surface-dominated conductance scaling in Weyl semimetal NbAs
Surface-dominated conductance scaling in Weyl semimetal NbAs Open
Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understa…
View article: Size-Dependent Grain-Boundary Scattering in Topological Semimetals
Size-Dependent Grain-Boundary Scattering in Topological Semimetals Open
We assess the viability of topological semimetals for application in advanced\ninterconnect technology, where conductor size is on the order of a few\nnanometers and grain boundaries are expected to be prevalent. We investigate\nthe electr…
View article: Unconventional Resistivity Scaling in Topological Semimetal CoSi
Unconventional Resistivity Scaling in Topological Semimetal CoSi Open
Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may h…
View article: Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition
Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition Open
The combination of area-selective deposition (ASD) with a patternable organic monolayer provides a versatile additive lithography platform, enabling the generation of a variety of nanoscale feature geometries. Stearate hydroxamic acid self…
View article: Chip Power-Frequency Scaling in 10/7nm Node
Chip Power-Frequency Scaling in 10/7nm Node Open
The 10/7nm node has been introduced by all major semiconductor manufacturers (Intel, TSMC, and Samsung Electronics). This article looks at the power-performance benefit of the 10/7nm node as compared to the previous node (14nm). Specifical…
View article: An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines Open
The applicability of the Fuchs-Sondheimer and Mayadas-Shatzkes scattering models below the 14nm node with wide interconnect trenches of variable aspect ratio is investigated. The aspect ratio of these lines was varied between 1.2, 1.8, and…
View article: A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects
A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects Open
We present an ab initio evaluation of electron scattering mechanisms in Al interconnects from a back-end-of-line (BEOL) perspective. We consider the ballistic conductance as a function of nanowire size, as well as the impact of surface oxi…