Nicholas C. Miller
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View article: Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV Open
View article: Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed
Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed Open
This article presents a real-time nonlinear vector network analyzer (NVNA) testbed that enables the acquisition of the isothermal transient response of GaN HEMTs operating in pulsed class-B mode with arbitrary loads. An oscilloscope-based …
View article: Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]
Nonlinear RF Modeling of GaN HEMTs With Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals] Open
Gallium nitride (GaN) HEMTs are a key technological component in current and next-generation RF and millimeter-wave (mm-wave) integrated circuits and subsystems. Applications where GaN has made considerable impact include radar, communicat…
View article: A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications
A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications Open
This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different found…
View article: Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements
Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements Open
This article presents an empirical investigation of calibration effects on load-pull measurements collected on wafer and at W-band frequencies. An analysis of scattering parameter (S-parameter) measurements provides insight into how small-…
View article: An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications Open
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard ASM-HEMT were developed to accurately capture the DC and RF measurements collected at varying chuck temperat…
View article: A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs
A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs Open
Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from …
View article: Toward high voltage radio frequency devices in <i>β</i>-Ga2O3
Toward high voltage radio frequency devices in <i>β</i>-Ga2O3 Open
The path to achieving integrated RF and power conversion circuitry using the β-Ga2O3 material system is described with regard to the materials high Johnson's RF figure of merit. Recent results, including large signal data at VD = 50 V, are…
View article: RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band Open
We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two barrier alloys-a ternary of ScAlN and a quaternary of ScAlGaN. The active…
View article: Pulsed Power Performance of <i>β</i>-Ga₂O₃ MOSFETs at L-Band
Pulsed Power Performance of <i>β</i>-Ga₂O₃ MOSFETs at L-Band Open
DC, small, and large signal results are shown under continuous wave and pulsed conditions for a β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistor operating at 1 and 2 GHz. The device has a maximum transduce…
View article: Self-Heating Characterization of $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography
Self-Heating Characterization of $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography Open
β-Ga 2 O 3 thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study selfheating effects in the MOSFET channel. The device was analyzed over a l…
View article: Lateral β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors
Lateral β-Ga<sub>2</sub>O<sub>3</sub> field effect transistors Open
Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap semiconductor with disruptive potential for ultra-low power loss, high-efficiency power applications. The critical field strength is the key enabling material parameter of BG…
View article: Computational study of Fermi kinetics transport applied to large-signal RF device simulations
Computational study of Fermi kinetics transport applied to large-signal RF device simulations Open