Nicolas Bernier
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View article: Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process
Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process Open
View article: Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1-nm-wide GaN/AlGaN quantum wells
Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1-nm-wide GaN/AlGaN quantum wells Open
Recent advancements in high-resolution spectroscopy analyses within the scanning transmission electron microscope (STEM) have paved the way for measuring the concentration of chemical species in crystalline materials at the atomic scale. H…
View article: The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials
The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials Open
Phase-change memory is a mature technology suitable for next generation of non-volatile memory, meeting the strict requirements of embedded applications. This was achieved by the stoichiometry tuning of GeSbTe (GST) alloy, enhancing the st…
View article: Experimental evidence of a ReRAM mechanism relying on <i>operando</i> nanometric depleted zone in V2O3 thin films
Experimental evidence of a ReRAM mechanism relying on <i>operando</i> nanometric depleted zone in V2O3 thin films Open
Emerging Non-Volatile Memories are foreseen to be ideal candidates for new non-Von Neuman computing paradigms and yield performances superior to the eFlash memories, which will contest eFlash supremacy for embedded memories and automotive …
View article: Transfer of diamond thin films using Smart Cut™ technology
Transfer of diamond thin films using Smart Cut™ technology Open
International audience
View article: Thermochemical treatment of sputtered-AlN/2D MoS<sub>2</sub> seed layers: a new elaboration process of highly <i>c</i>-axis AlN films
Thermochemical treatment of sputtered-AlN/2D MoS<sub>2</sub> seed layers: a new elaboration process of highly <i>c</i>-axis AlN films Open
AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS 2 thin film can be…
View article: An Electrochemical Strategy for Chalcogenation of closo-Dodecaborate (B12H12)2– Anion
An Electrochemical Strategy for Chalcogenation of closo-Dodecaborate (B12H12)2– Anion Open
Advancements in thermal neutron generation technologies within clinical environments have led to a renewed interest in developing boron-containing compounds for boron neutron capture therapy (BNCT). Previous syntheses of several key boron …
View article: Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1 nm-wide GaN/AlGaN quantum wells
Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1 nm-wide GaN/AlGaN quantum wells Open
Recent advancements in high-resolution spectroscopy analyses within the scanning transmission electron microscope (STEM) have paved the way for measuring the concentration of chemical species in crystalline materials at the atomic scale. H…
View article: Transfer of 200mm GeSn Wafers using Bonded Etch-Back Silicon-On-Insulator Process
Transfer of 200mm GeSn Wafers using Bonded Etch-Back Silicon-On-Insulator Process Open
View article: GeTe/Sb<sub>2</sub>Te<sub>3</sub> Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices
GeTe/Sb<sub>2</sub>Te<sub>3</sub> Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices Open
Phase change memories (PCMs) are at the heart of modern memory technology, offering multi‐level storage, fast read/write operations, and non‐volatility, bridging the gap between volatile DRAM and non‐volatile Flash. The reversible transiti…
View article: Large quadrupole deformation in $^{20}$Ne challenges rotor model and modern theory: urging for $α$ clusters in nuclei
Large quadrupole deformation in $^{20}$Ne challenges rotor model and modern theory: urging for $α$ clusters in nuclei Open
The spectroscopic quadrupole moment of the first excited state, $Q_{_S}(2^{+}_{1})$, at 1.634 MeV in $^{20}$Ne was determined from sensitive reorientation-effect Coulomb-excitation measurements using a heavy target and safe energies well b…
View article: Correction: Fabrication and Characterization of Boron-Implanted Silicon Superconducting Thin Films on SOI Substrates for Low-Temperature Detectors
Correction: Fabrication and Characterization of Boron-Implanted Silicon Superconducting Thin Films on SOI Substrates for Low-Temperature Detectors Open
View article: Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]
Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)] Open
The original article 1 has used an incorrect Fig. 3(b), which should be replaced with Fig. 3(b) here.In the original article, Fig. 3(b) was identical to Fig. 3(a) and both presented a cross-sectional STEM of the 100 nm AlN PVD deposited on…
View article: MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy
MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy Open
Aluminum nitride (AlN) is a wide bandgap material used in acoustic devices, piezo- micro-electromechanical system and is promising for other electronic applications. However, for most applications, the AlN crystalline quality obtained by P…
View article: Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy
Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy Open
International audience
View article: Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers
Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers Open
This article presents low-loss mid-infrared waveguides fabricated on a Ge-rich SiGe strain-relaxed buffer grown on an industrial-scale 200 mm wafer, with propagation losses below 0.5 dB/cm for 5-7 µm wavelengths and below 5 dB/cm up to 11 …
View article: Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature
Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature Open
Ge‐rich GeSbTe chalcogenide alloys have gained significant attention in the field of phase‐change materials due to their remarkable thermal stability and thus their suitability for integration in nonvolatile memories targeting embedded aut…
View article: Quantitative Scanning Transmission Electron Microscopy–High‐Angle‐Annular Dark‐Field Study of the Structure of Pseudo‐2D Sb<sub>2</sub>Te<sub>3</sub> Films Grown by (Quasi) Van der Waals Epitaxy
Quantitative Scanning Transmission Electron Microscopy–High‐Angle‐Annular Dark‐Field Study of the Structure of Pseudo‐2D Sb<sub>2</sub>Te<sub>3</sub> Films Grown by (Quasi) Van der Waals Epitaxy Open
Scanning transmission electron microscopy (STEM) techniques are used to improve the understanding of out‐of‐plane oriented Sb 2 Te 3 thin films deposited by sputtering on SiO 2 and Si substrates. Nanobeam precession electron diffraction, e…
View article: Electron beam propagation impact on high-resolution quantitative chemical analysis of GaN/AlGaN 1 nm-thick quantum wells
Electron beam propagation impact on high-resolution quantitative chemical analysis of GaN/AlGaN 1 nm-thick quantum wells Open
View article: Spin-Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering
Spin-Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering Open
Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge…
View article: Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb<sub>2</sub>Te<sub>3</sub> Deposited by Industrial Magnetron Sputtering
Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb<sub>2</sub>Te<sub>3</sub> Deposited by Industrial Magnetron Sputtering Open
Driving a spin‐logic circuit requires the production of a large output signal by spin‐charge interconversion in spin‐orbit readout devices. This should be possible by using topological insulators, which are known for their high spin‐charge…
View article: Antisite Defects and Chemical Expansion in Low‐damping, High‐magnetization Yttrium Iron Garnet Films
Antisite Defects and Chemical Expansion in Low‐damping, High‐magnetization Yttrium Iron Garnet Films Open
Yttrium iron garnet is widely investigated for its suitability in applications ranging from magneto‐optical and microwave devices to magnonics. However, in the few‐nanometer thickness range, epitaxial films exhibit a strong variability in …
View article: Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses
Impact of strain on Si and Sn incorporation in (Si)GeSn alloys by STEM analyses Open
The structural properties of CVD-grown (Si)GeSn heterostructures were assessed thanks to scanning transmission electron microscopy at the nanometer scale. Quantitative energy dispersive x-ray (EDX) spectroscopy together with precession ele…
View article: Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers
Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers Open
Engineering of chalcogenide phase-change materials at the nanoscale is required to improve the performances of ultimate size memory devices and reduce their power consumption.
View article: TiTe/Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>Bi-layer-based Phase-Change Memory Targeting Storage Class Memory
TiTe/Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>Bi-layer-based Phase-Change Memory Targeting Storage Class Memory Open
In this work, we introduce an innovative Phase-Change Memory (PCM) based on a TiTe and Ge 2 Sb 2 Te 5 (GST) bi-layer stack that presents low resistance variability since the out-of-fabrication in 4 kb array. It allows creating reliably an …
View article: Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers
Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers Open
Innovative nanocomposites consisting of [(GeTe) 4 nm/ C 1 nm ] 10 multilayers (MLs) deposited by magnetron sputtering are integrated in phase‐change memory (PCM) test devices with a “wall structure.” Scanning transmission electron microsco…
View article: The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature
The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature Open
View article: Review of Contemporary Sound Installation Practices in Québec
Review of Contemporary Sound Installation Practices in Québec Open
Continuing a trend of publications investigating sound art within a specific geographical context, this paper proposes an original view of the sound installation practice in Québec. This study is part of a research project aiming at buildi…
View article: Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory
Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory Open
Metal oxide-based resistive random access memory devices are highly attractive candidates for next-generation nonvolatile memories, but the resistive switching phenomena remain poorly understood. This article focuses on the microscopic und…
View article: Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays
Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays Open