Nicolas Ubrig
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View article: Brightened Optical Transition Hinting to Strong Spin‐Lattice Coupling in a Layered Antiferromagnet
Brightened Optical Transition Hinting to Strong Spin‐Lattice Coupling in a Layered Antiferromagnet Open
Two‐dimensional (2D) van der Waals magnets show strong interconnection between their electrical, magnetic, and structural properties. Here, the emergence of a luminescent transition is revealed upon crossing the Néel transition temperature…
View article: Positive Oscillating Magnetoresistance in a van der Waals Antiferromagnetic Semiconductor
Positive Oscillating Magnetoresistance in a van der Waals Antiferromagnetic Semiconductor Open
In all van der Waals layered antiferromagnetic semiconductors investigated so far, a negative magnetoresistance has been observed in vertical transport measurements, with characteristic trends that do not depend on applied bias. Here, we r…
View article: Positive oscillating magnetoresistance in a van der Waals antiferromagnetic semiconductor
Positive oscillating magnetoresistance in a van der Waals antiferromagnetic semiconductor Open
In all van der Waals layered antiferromagnetic semiconductors investigated so far a negative magnetoresistance has been observed in vertical transport measurements, with characteristic trends that do not depend on applied bias. Here we rep…
View article: Brightened Optical Transition as Indicator of Multiferroicity in a Layered Antiferromagnet
Brightened Optical Transition as Indicator of Multiferroicity in a Layered Antiferromagnet Open
Two-dimensional van der Waals magnets show strong interconnection between their electrical, magnetic, and structural properties. Here we reveal the emergence of a luminescent transition upon crossing the Néel transition temperature of CrPS…
View article: Quenching of the band gap of two-dimensional semiconductors with a perpendicular electric field<sup>*</sup>
Quenching of the band gap of two-dimensional semiconductors with a perpendicular electric field<sup>*</sup> Open
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite ba…
View article: Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS<sub>4</sub> Transistors
Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS<sub>4</sub> Transistors Open
Transistors realized on the 2D antiferromagnetic semiconductor CrPS4 exhibit large magnetoconductance due to magnetic-field-induced changes in the magnetic state. The microscopic mechanism coupling the conductance and magnetic state is not…
View article: Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr3 multilayers
Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr3 multilayers Open
In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Rec…
View article: Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr$_3$ multilayers
Multiple antiferromagnetic phases and magnetic anisotropy in exfoliated CrBr$_3$ multilayers Open
In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Rec…
View article: Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors
Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors Open
Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not underst…
View article: Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS<sub>4</sub>
Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS<sub>4</sub> Open
Using field‐effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing tran…
View article: Full Control of Solid‐State Electrolytes for Electrostatic Gating
Full Control of Solid‐State Electrolytes for Electrostatic Gating Open
Ionic gating is a powerful technique to realize field‐effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make …
View article: Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS$_4$
Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS$_4$ Open
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing tran…
View article: Probing Magnetism in Exfoliated VI3 Layers with Magnetotransport
Probing Magnetism in Exfoliated VI3 Layers with Magnetotransport Open
We perform magnetotransport experiments on VI$_3$ multilayers, to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that …
View article: Observation of flat $Γ$ moiré bands in twisted bilayer WSe$_2$
Observation of flat $Γ$ moiré bands in twisted bilayer WSe$_2$ Open
The recent observation of correlated phases in transition metal dichalcogenide moiré systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such…
View article: Probing Magnetism in Exfoliated VI<sub>3</sub>Layers with Magnetotransport
Probing Magnetism in Exfoliated VI<sub>3</sub>Layers with Magnetotransport Open
We perform magnetotransport experiments on VI3 multilayers to investigate the relation between ferromagnetism in bulk and in exfoliated layers. The magnetoconductance measured on field-effect transistors and tunnel barriers shows that the …
View article: Light sources with bias tunable spectrum based on van der Waals interface transistors
Light sources with bias tunable spectrum based on van der Waals interface transistors Open
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by sim…
View article: Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor
Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor Open
Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differe…
View article: Quenching the band gap of 2D semiconductors with a perpendicular electric field
Quenching the band gap of 2D semiconductors with a perpendicular electric field Open
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite ba…
View article: Van der Waals Interface Transistors as Light Sources with Bias Tunable Spectrum
Van der Waals Interface Transistors as Light Sources with Bias Tunable Spectrum Open
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by sim…
View article: Magnetization dependent tunneling conductance of ferromagnetic barriers
Magnetization dependent tunneling conductance of ferromagnetic barriers Open
Recent experiments on van der Waals antiferromagnets have shown that measuring the temperature (T) and magnetic field (H) dependence of the conductance allows their magnetic phase diagram to be mapped. Similarly, experiments on ferromagnet…
View article: Giant anomalous Hall effect in quasi-two-dimensional layered antiferromagnet Co<sub>1/3</sub>NbS<sub>2</sub>
Giant anomalous Hall effect in quasi-two-dimensional layered antiferromagnet Co<sub>1/3</sub>NbS<sub>2</sub> Open
The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can, in principle, be obser…
View article: Flipping exciton angular momentum with chiral phonons in MoSe<sub>2</sub>/WSe<sub>2</sub> heterobilayers
Flipping exciton angular momentum with chiral phonons in MoSe<sub>2</sub>/WSe<sub>2</sub> heterobilayers Open
Optical selection rules in monolayers of transition metal dichalcogenides and of their heterostructures are determined by the conservation of the z-component of the total angular momentum—J Z = L Z +S Z – associated with the C3 rotational …
View article: Synthetic Semimetals with van der Waals Interfaces
Synthetic Semimetals with van der Waals Interfaces Open
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW…
View article: Low-temperature monoclinic layer stacking in atomically thin CrI<sub>3</sub> crystals
Low-temperature monoclinic layer stacking in atomically thin CrI<sub>3</sub> crystals Open
Chromium triiodide, CrI 3 , is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering b…
View article: Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals
Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals Open
Chromium triiodide, CrI$_3$, is emerging as a promising magnetic two-dimensional semiconductor where spins are ferromagnetically aligned within a single layer. Potential applications in spintronics arise from an antiferromagnetic ordering …
View article: Microfocus Laser–Angle-Resolved Photoemission on Encapsulated Mono-, Bi-, and Few-Layer 1T′-WTe<sub>2</sub>
Microfocus Laser–Angle-Resolved Photoemission on Encapsulated Mono-, Bi-, and Few-Layer 1T′-WTe<sub>2</sub> Open
Two-dimensional crystals of semi-metallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few-layer 1T'-WTe2 and of a quantum spin Hall state in …
View article: Semiconducting van der Waals Interfaces as Artificial Semiconductors
Semiconducting van der Waals Interfaces as Artificial Semiconductors Open
Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is…