Nicolas Vaissière
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View article: Single-chip silicon photonic engine for analog optical and microwave signals processing
Single-chip silicon photonic engine for analog optical and microwave signals processing Open
We present a photonic engine that processes both optical and microwave signals, and can convert signals between the two domains. Our photonic chip, fabricated in IMEC's iSiPP50G silicon photonics process, is capable of both generation and …
View article: Micro-transfer-printed short-wave infrared InP-on-silicon tunable laser
Micro-transfer-printed short-wave infrared InP-on-silicon tunable laser Open
We report an indium phosphide (InP)-on-silicon laser operating at short-wave infrared (SWIR) wavelengths, realized using micro-transfer printing (μTP) technology. Through thermal tuning of the integrated micro-ring resonators, the device i…
View article: Mode-locking in a semiconductor photonic bandgap laser
Mode-locking in a semiconductor photonic bandgap laser Open
Multimode lasers have a very complex dynamics, as expected when oscillators are nonlinearly coupled. Order emerges when the modes lock together; in this case the coherent superposition of the modes results into a periodic train of pulses o…
View article: Single-Chip Silicon Photonic Engine for Analog Optical and Microwave Signals Processing
Single-Chip Silicon Photonic Engine for Analog Optical and Microwave Signals Processing Open
We present a photonic engine that processes both optical and microwave signals, and can convert signals between the two domains. Our photonic chip, fabricated in IMEC's iSiPP50G silicon photonics process, is capable of both generation and …
View article: 56 Gbps externally modulated widely tunable lasers with SOA boosters heterogeneously integrated on silicon
56 Gbps externally modulated widely tunable lasers with SOA boosters heterogeneously integrated on silicon Open
We demonstrate externally modulated widely tunable lasers co-integrated with semiconductor optical amplifiers (SOAs) heterogeneously integrated on silicon. The widely tunable laser enables continuous single-mode operation over a tuning ran…
View article: Hybrid InP/SiN photonic integrated circuits for RF systems and optical sensing
Hybrid InP/SiN photonic integrated circuits for RF systems and optical sensing Open
In this paper we present the developments carried out at III-V lab in collaboration with CEA-Leti on the hybridintegration of III-V chips with ultra-low-loss silicon nitride circuits for optical detection and RF systems. Different typesof …
View article: Single-Chip Silicon Photonic Processor for AnalogOptical and Microwave Signals
Single-Chip Silicon Photonic Processor for AnalogOptical and Microwave Signals Open
We present a single photonic chip that processes both optical and microwave signals, and can convert signals between the two domains. Our chip, fabricated in IMEC’s iSiPP50G silicon photonics process, is capable of both generation and dete…
View article: Heterogeneous tunable III-V-on-silicon-nitride mode-locked laser emitting wide optical spectra
Heterogeneous tunable III-V-on-silicon-nitride mode-locked laser emitting wide optical spectra Open
We demonstrate a III-V-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon-nitride cavity using the technique of micro-transfer printing. In the initial phase…
View article: Single-Chip Silicon Photonic Processor for Analog Optical and Microwave Signals
Single-Chip Silicon Photonic Processor for Analog Optical and Microwave Signals Open
The explosion of data volume in communications, AI training, and cloud computing requires efficient data handling, which is typically stored as digital electrical information and transmitted as wireless radio frequency (RF) signals or ligh…
View article: High-Speed Direct Modulation on III-V-on-SOI Distributed Feedback Lasers with Intrinsic Electro-Optical Bandwidth Over 20 GHz
High-Speed Direct Modulation on III-V-on-SOI Distributed Feedback Lasers with Intrinsic Electro-Optical Bandwidth Over 20 GHz Open
International audience
View article: Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives
Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives Open
Multilayer III–V-based solar cells are complex devices consisting of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. In this work, we ap…
View article: High-frequency Scalable Modelling of 100 GHz Class Uni-Travelling Carrier Photodiodes
High-frequency Scalable Modelling of 100 GHz Class Uni-Travelling Carrier Photodiodes Open
International audience
View article: SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design
SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design Open
International audience
View article: Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates Open
The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a pros…
View article: Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range
Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range Open
In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing ( µ TP) technology. Two types of pre-fabricated II…
View article: Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings
Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings Open
We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm −1 ) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over …
View article: Narrow-Linewidth Micro-Transfer-Printed III-V-on-Si Laser with 110 nm Tuning Range
Narrow-Linewidth Micro-Transfer-Printed III-V-on-Si Laser with 110 nm Tuning Range Open
On-chip laser sources covering a wide wavelength range is one of the key enablers to coherent optical communication systems. In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si laser with 110 nm tuning range real…
View article: Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination
Revealing of InP multi-layer stacks from KPFM measurements in the dark and under illumination Open
Solar cells are complex devices, being constituted of many layers and interfaces. The study and the comprehension of the mechanisms that take place at the interfaces is crucial for efficiency improvement. This paper applies Kelvin probe fo…
View article: AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth
AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth Open
The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits …
View article: Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers
Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers Open
Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spect…
View article: Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design
Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design Open
Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet …
View article: Rochelle Salt-Based Ferroelectric and Piezoelectric Composite Produced with Simple Additive Manufacturing Techniques
Rochelle Salt-Based Ferroelectric and Piezoelectric Composite Produced with Simple Additive Manufacturing Techniques Open
More than one century ago, piezoelectricity and ferroelectricity were discovered using Rochelle salt crystals. Today, modern societies are invited to switch to a resilient and circular economic model. In this context, this work proposes a …
View article: Ultra compact High responsivity photodiodes for >100 Gbaud applications
Ultra compact High responsivity photodiodes for >100 Gbaud applications Open
International audience
View article: Rochelle Salt Based Ferroelectric and Piezoelectric Composite Produced with Simple Additive Manufacturing Techniques
Rochelle Salt Based Ferroelectric and Piezoelectric Composite Produced with Simple Additive Manufacturing Techniques Open
One century ago, ferroelectricity and then piezoelectricity were discovered using Rochelle salt crystals. Today, modern societies are invited to switch towards a resilient and circular economy model. In this context, this work proposes a m…
View article: As-Grown InGaAsN Subcells for Multijunction Solar Cells by Molecular Beam Epitaxy
As-Grown InGaAsN Subcells for Multijunction Solar Cells by Molecular Beam Epitaxy Open
International audience
View article: Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems
Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems Open
This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz si…
View article: Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition
Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor deposition Open
International audience