Niloy Chandra Saha
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View article: (100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography
(100) Microcracks induced by (1 ± 11) stacking faults in halide vapor deposited (001) β-Ga2O3: Origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron x-ray topography Open
This study reports that microcracks on a halide vapor-phase epitaxy (HVPE)-deposited (001) β-Ga2O3 epitaxial layer are killer defects in Schottky barrier diodes (SBDs). The microcracks are (100) cracks with a typical length of 1.7–5.1 μm a…
View article: Microgrooves with low-index facets in halide vapor deposited (001) β-Ga<sub>2</sub>O<sub>3</sub>: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography
Microgrooves with low-index facets in halide vapor deposited (001) β-Ga<sub>2</sub>O<sub>3</sub>: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography Open
We have found microgrooves on the (001) β -Ga 2 O 3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μ A at −64 V]. The microgrooves tende…
View article: Estimating the Impacts of AV and CAV and Technologies Transportation Systems for Medium, Long, and Buildout Transportation Planning Horizons
Estimating the Impacts of AV and CAV and Technologies Transportation Systems for Medium, Long, and Buildout Transportation Planning Horizons Open
Autonomous vehicles (AVs) and connected autonomous vehicles (CAVs) are expected to have a significant impact on highways, but their planning horizon impacts have not been fully studied in the literature. This study seeks to address this ga…
View article: The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure Open
In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and …