Noriyuki Miyata
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View article: Room temperature-produced chalcogenide superlattices for interfacial phase-change memory
Room temperature-produced chalcogenide superlattices for interfacial phase-change memory Open
Phase-change memory (PCM) using chalcogenide films composed of Ge–Sb–Te alloys is the only commercially available nonvolatile memory for storage class memory. Recently, superlattice films of GeTe and Sb2Te3, called interfacial PCM (iPCM), …
View article: Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications
Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications Open
In the pursuit of energy-efficient spiking neural network (SNN) hardware, synaptic devices leveraging emerging memory technologies hold significant promise. This study investigates the application of the recently proposed HfO2/SiO2-based i…
View article: Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications
Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications Open
In the pursuit of energy-efficient spiking neural network (SNN) hardware, synaptic devices lev-eraging emerging memory technologies hold significant promise. This study investigates the ap-plication of the recently proposed HfO2/SiO2-based…
View article: Exploring thermally stable metal-oxide/SiO<sub>2</sub> stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response
Exploring thermally stable metal-oxide/SiO<sub>2</sub> stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response Open
We fabricated Al 2 O 3 /SiO 2 stack structures with atomically thin Ti oxide layers at the interfaces using atomic layer deposition and investigated the capacitance–voltage ( C – V ) hysteresis of the metal-oxide-semiconductor (MOS) capaci…
View article: Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition
Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition Open
Low-temperature direct synthesis of thick multilayered hexagonal-boron nitride (h-BN) on semiconducting and insulating substrates is required to produce high-performance electronic devices based on two-dimensional (2D) materials. In this s…
View article: Non-volatile compact optical phase shifter based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> operating at 2.3 µm
Non-volatile compact optical phase shifter based on Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> operating at 2.3 µm Open
We investigate an optical phase shifter based on Ge 2 Sb 2 Te 5 (GST) integrated with a Si waveguide at mid-infrared (MIR) wavelengths. Since the optical absorption of both amorphous and crystalline GST can be reduced at a longer wavelengt…
View article: Electrically induced change in HfO<sub>2</sub>/1-monolayer TiO<sub>2</sub>/SiO<sub>2</sub> metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies
Electrically induced change in HfO<sub>2</sub>/1-monolayer TiO<sub>2</sub>/SiO<sub>2</sub> metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies Open
Metal-oxide-semiconductor capacitors with HfO 2 /1-monolayer TiO 2 /SiO 2 stacks were examined to explore the origin of the interface dipole modulation. The capacitance–voltage ( C–V ) measurements exhibited that the polarity of the interf…
View article: Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures Open
In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltag…
View article: Topologically protected spin diffusion and spin generator using chalcogenide superlattices
Topologically protected spin diffusion and spin generator using chalcogenide superlattices Open
Spintronics is expected to be the basis for future ultra-low-energy nanoelectronic devices. To operate such devices at room temperature, amplifiers, batteries, capacitors, as well as spin current sources are required. Here we report a chal…
View article: Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation
Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation Open
In this study, we found that stable interface dipole modulation (IDM) is possible for HfO2/1-monolayer TiO2/SiO2 stack structures prepared by using a low temperature annealing process of about 300 °C. We investigated in detail the impact o…
View article: Electric-field-controlled interface dipole modulation for Si-based memory devices
Electric-field-controlled interface dipole modulation for Si-based memory devices Open
View article: A two-step process for growth of highly oriented Sb2Te3 using sputtering
A two-step process for growth of highly oriented Sb2Te3 using sputtering Open
A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depe…