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View article: GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers
GaAs-based photonic integrated circuit platform enabling monolithic ring-resonator-coupled lasers Open
This paper reports on a monolithically integrated gallium arsenide (GaAs)-based photonic integrated circuit platform for wavelengths around 1064 nm. Enabled by spatially selective quantum well removal and two-step epitaxial growth, it supp…
View article: High‐power mode‐hop‐free tunable DFB laser at 780 nm
High‐power mode‐hop‐free tunable DFB laser at 780 nm Open
A distributed feedback laser with integrated quarter‐wave phase shift and more than 100 mW optical output power at an emission wavelength of 780 nm is presented. The laser provides mode‐hop‐free tuning over a wide range of injections curre…
View article: High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness
High-power diode lasers with in-situ-structured lateral current blocking for improved threshold, efficiency and brightness Open
We present high-power GaAs-based broad-area diode lasers with a novel variant of the enhanced self-aligned lateral structure ‘eSAS’, having a strongly reduced lasing threshold and improved peak conversion efficiency and beam quality in com…
View article: Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm
Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm Open
The spectral linewidth of semiconductor lasers is a crucial performance parameter in a growing number of applications. A common method to improve the coherence of the laser relies on increasing the optical cavity length by an extended sect…
View article: Novel 1064 nm DBR lasers combining active layer removal and surface gratings
Novel 1064 nm DBR lasers combining active layer removal and surface gratings Open
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in p…
View article: High-brightness broad-area diode lasers with enhanced self-aligned lateral structure
High-brightness broad-area diode lasers with enhanced self-aligned lateral structure Open
Broad-area diode lasers with increased brightness and efficiency are presented, which are fabricated using an enhanced self-aligned lateral structure by means of a two-step epitaxial growth process with an intermediate etching step. In thi…
View article: Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots
Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots Open
In this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple sheets of InAs in a GaAs matrix, submonolaye…
View article: Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power
Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power Open
The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various …