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View article: Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition Open
In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) a…
View article: Optical metrology of 3D thin film conformality by LHAR chip assisted method
Optical metrology of 3D thin film conformality by LHAR chip assisted method Open
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View article: Resonating AlN-thin film MEMS mirror with digital control
Resonating AlN-thin film MEMS mirror with digital control Open
Piezoelectrically actuated resonant micromirrors were designed to meet the light detection and ranging (LiDAR) system requirements. Key features were a 3-mm mirror aperture, a 40-deg field of view, and a 50-Hz refresh rate. The presented m…
View article: ALD Al2O3 thickness profile in microscopic rectangular channel, TMA-water 300 degC 500 cycles, PillarHall(TM) LHAR3-1b, V0001
ALD Al2O3 thickness profile in microscopic rectangular channel, TMA-water 300 degC 500 cycles, PillarHall(TM) LHAR3-1b, V0001 Open
Thickness profile data measured for aluminium oxide thin film grown by atomic layer deposition (ALD) using trimethylaluminium and water as reactants at 300 degrees Celsius on an all-silicon lateral high-aspect-ratio (LHAR) test structure o…
View article: ALD Al2O3 thickness profile in microscopic rectangular channel, TMA-water 300 degC 500 cycles, PillarHall(TM) LHAR3-1b, V0001
ALD Al2O3 thickness profile in microscopic rectangular channel, TMA-water 300 degC 500 cycles, PillarHall(TM) LHAR3-1b, V0001 Open
Thickness profile data measured for aluminium oxide thin film grown by atomic layer deposition (ALD) using trimethylaluminium and water as reactants at 300 degrees Celsius on an all-silicon lateral high-aspect-ratio (LHAR) test structure o…
View article: Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition
Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition Open
View article: Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure
Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure Open
Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and pr…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels Open
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made…
View article: Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels
Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels Open
Thin films by atomic layer deposition (ALD) raise global interest through unparalleled conformality. Saturation profiles of the archetypical trimethylaluminum-water ALD process in narrow rectangular channels create a benchmark for future s…
View article: Intercalation of Lithium Ions from Gaseous Precursors into β-MnO<sub>2</sub> Thin Films Deposited by Atomic Layer Deposition
Intercalation of Lithium Ions from Gaseous Precursors into β-MnO<sub>2</sub> Thin Films Deposited by Atomic Layer Deposition Open
LiMn2O4 is a promising candidate for a cathode material in lithium-ion batteries because of its ability to intercalate lithium ions reversibly through its three-dimensional manganese oxide network. One of the promising techniques for depos…
View article: Microelectrode Array With Transparent ALD TiN Electrodes
Microelectrode Array With Transparent ALD TiN Electrodes Open
Low noise platinum black or sputtered titanium nitride (TiN) microelectrodes are typically used for recording electrical activity of neuronal or cardiac cell cultures. Opaque electrodes and tracks, however, hinder the visibility of the cel…
View article: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide Open
View article: Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films Open
A comparative study of mechanical properties and elemental and structural composition was made for aluminum nitride thin films deposited with reactive magnetron sputtering and plasma enhanced atomic layer deposition (PEALD). The sputtered …
View article: Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures
Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures Open
The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD gr…
View article: (Semi-)transparent ALD TiN microelectrodes
(Semi-)transparent ALD TiN microelectrodes Open
Event Abstract Back to Event (Semi-)transparent ALD TiN microelectrodes Tomi Ryynänen1*, Anssi Pelkonen2, Kestutis Grigoras3, Oili Ylivaara3, Jouni Ahopelto3, Mika Prunnila3, Susanna Narkilahti2 and Jukka Lekkala1 1 Tampere University of T…
View article: Tribological properties of thin films made by atomic layer deposition sliding against silicon
Tribological properties of thin films made by atomic layer deposition sliding against silicon Open
Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological p…
View article: Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” Open
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas–solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for deposi…
View article: Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties Open
Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolamina…
View article: Thermal conductivity of amorphous Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>nanolaminates deposited by atomic layer deposition
Thermal conductivity of amorphous Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>nanolaminates deposited by atomic layer deposition Open
The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates …
View article: Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon Open
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon waf…
View article: Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate
Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate Open