Olivia D. Schneble
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View article: Epitaxial stabilization and oxygen vacancy control of EuNiO3 thin films
Epitaxial stabilization and oxygen vacancy control of EuNiO3 thin films Open
Rare-earth nickelates exhibit valuable behavior for neuromorphic computing at low temperature: Building blocks for biologically inspired microelectronic neurons like electrically driven insulator–metal transitions (IMTs), negative differen…
View article: Prediction of Ambient-Pressure High-Temperature Superconductivity in Doped Transition-Metal Hydrides
Prediction of Ambient-Pressure High-Temperature Superconductivity in Doped Transition-Metal Hydrides Open
The search for conventional superconductors with high transition temperatures ($T_c$) has largely focused on intrinsically metallic compounds. In this work, we explore the potential of intrinsically non-metallic compounds to exhibit high-$…
View article: Electrically-driven IMT and volatile memristor behavior in NdNiO<sub>3</sub> films
Electrically-driven IMT and volatile memristor behavior in NdNiO<sub>3</sub> films Open
Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration int…
View article: Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior
Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior Open
In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially p…
View article: Methods for depositing III-alloys on substrates and compositions therefrom
Methods for depositing III-alloys on substrates and compositions therefrom Open
A method for depositing III-V alloys on substrates and compositions therefrom. A first layer comprises a Group III element. A second layer comprises a silica. A substrate has a surface. The second layer is deposited onto a first layer. The…
View article: Coalescence of GaP on V-Groove Si Substrates
Coalescence of GaP on V-Groove Si Substrates Open
Here, we study the morphology and dislocation dynamics of metalorganic vapor phase epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate stabilizes the (0 0 1) GaP facet, which is critical for achieving c…
View article: Coalescence of GaP on V-Groove Si
Coalescence of GaP on V-Groove Si Open
In recent years, better understanding and control over the formation of crystalline defects during the direct epitaxy of III-V semiconductors on Si substrates via metal organic vapor phase epitaxy (MOVPE) has enabled large gains in III-V-o…
View article: Communication—Electrodeposition of Indium Directly on Silicon
Communication—Electrodeposition of Indium Directly on Silicon Open
Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic se…
View article: Application of templated vapor-liquid-solid growth to heteroepitaxy of InP on Si
Application of templated vapor-liquid-solid growth to heteroepitaxy of InP on Si Open
Direct growth of III–V semiconductors on Si promises to combine the superior optoelectronic properties of III–Vs with the existing large-scale fabrication capabilities for Si. Vapor-liquid-solid-based growth techniques have previously been…