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View article: Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer Open
The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time perio…
View article: Dopant-defect interactions in Mg-doped GaN via atom probe tomography
Dopant-defect interactions in Mg-doped GaN via atom probe tomography Open
In this work, an in-depth analysis of atomic level dopant-defect interactions in N-polar GaN:Mg was performed using atom probe tomography (APT). The 3D visualization of ion distribution revealed the formation of spherical Mg-rich clusters …
View article: Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer
Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer Open
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
View article: Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature
Ultrathin epitaxial NbN superconducting films with high upper critical field grown at low temperature Open
Ultrathin (5–50 nm) epitaxial superconducting niobium nitride (NbN) films were grown on AlN-buffered c-plane Al2O3 by an industrial scale physical vapor deposition technique at 400°C. Both X-ray diffraction and scanning electron microscopy…
View article: Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography
Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography Open
In this work, doping-defect interactions relevant to self-compensation in p-type GaN were investigated using atom probe tomography. The 3D visualization of ion distribution revealed the formation of spherical Mg-rich clusters and the segre…
View article: Determining Medium Range Atomic Ordering in Metallic Glasses Using 4D-STEM
Determining Medium Range Atomic Ordering in Metallic Glasses Using 4D-STEM Open
Journal Article Determining Medium Range Atomic Ordering in Metallic Glasses Using 4D-STEM Get access Soohyun Im, Soohyun Im The Ohio State University, Columbus, Ohio, United States Search for other works by this author on: Oxford Academic…
View article: Metalorganic chemical vapor deposition of ZnGeN<sub>2</sub> films on GaN: effects of cation stoichiometry on surface morphology and crystallinity
Metalorganic chemical vapor deposition of ZnGeN<sub>2</sub> films on GaN: effects of cation stoichiometry on surface morphology and crystallinity Open
Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN2 quantum well (QW) structures instead of pure InGaN, t…
View article: Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition Open
ZnGeN2 films were grown on GaN-on-sapphire templates via metalorganic chemical vapor deposition. Energy dispersive x-ray spectroscopy was used to estimate the Zn/(Zn + Ge) composition ratio in the films. This ratio decreased with an increa…
View article: Structural Heterogeneity, Ductility, and Glass Forming Ability of Zr-Based Metallic Glasses
Structural Heterogeneity, Ductility, and Glass Forming Ability of Zr-Based Metallic Glasses Open
We show the correlation between nanoscale structural heterogeneity and mechanical property and glass forming ability of Zr-based metallic glasses (MGs). Detailed parameters of medium range ordering (MRO) that constitutes the structural het…
View article: Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD Open
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template…
View article: Validation of fitness tracker for sleep measures in women with asthma
Validation of fitness tracker for sleep measures in women with asthma Open
Objective: Nighttime wakening with asthma symptoms is a key to assessment and therapy decisions, with no gold standard objective measure. The study aims were to (1) determine the feasibility, (2) explore equivalence, and (3) test concordan…
View article: Validation of fitness tracker for sleep measures in women with asthma
Validation of fitness tracker for sleep measures in women with asthma Open
There were important differences in total sleep time, efficiency, and wake count measures when comparing individual sleep segments versus 24-hour measures of sleep. Fitbit overestimates sleep efficiency and underestimates wake counts in th…
View article: Validation of fitness tracker for sleep measures in women with asthma
Validation of fitness tracker for sleep measures in women with asthma Open
Objective: Nighttime wakening with asthma symptoms is a key to assessment and therapy decisions, with no gold standard objective measure. The study aims were to (1) determine the feasibility, (2) explore equivalence, and (3) test concordan…