Olivier Henri‐Rousseau
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View article: 31.474 (44.359) %- Limiting Highest Efficiencies obtained in the \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
31.474 (44.359) %- Limiting Highest Efficiencies obtained in the \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size Open
In our recent works [1,2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J oI(II) ≡being injected respectively into the heavily do…
View article: 33.01% (31.06%)- Limiting Highest Efficiencies obtained in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline Silicon Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
33.01% (31.06%)- Limiting Highest Efficiencies obtained in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline Silicon Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size Open
In our recent two works [1,2], by basing on: (1) the effects of heavy(light) doping and donor (acceptor), d(a), size , which affect the total carrier-minority saturation current density J oI(II) ≡being injected respectively into the heavil…
View article: Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I
Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I Open
The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density JEo(JBo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base)…