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View article: Absorption enhancement in LWIR detector via waveguide and plasmonic modes engineering
Absorption enhancement in LWIR detector via waveguide and plasmonic modes engineering Open
A high-temperature long-wavelength infrared (LWIR) photodetector using a thin InAs/InAsSb type-II superlattice (T2SL) absorber with enhanced optical absorption is demonstrated. The enhancement results from the excitation of planar waveguid…
View article: Absorption enhancement in LWIR detector via waveguide and plasmonic modes engineering
Absorption enhancement in LWIR detector via waveguide and plasmonic modes engineering Open
A high-temperature long-wavelength infrared (LWIR) photodetector based on a thin InAs/InAsSb type-II superlattice (T2SL) absorber is presented, utilizing enhanced optical absorption. This enhancement arises from the excitation of planar wa…
View article: Absorption enhancement in LWIR detector via waveguide and plasmonic modes engineering
Absorption enhancement in LWIR detector via waveguide and plasmonic modes engineering Open
A high-temperature long-wavelength infrared (LWIR) photodetector based on a thin InAs/InAsSb type-II superlattice (T2SL) absorber is presented, utilizing enhanced optical absorption. This enhancement arises from the excitation of planar wa…
View article: Rigorous optical modelling of long-wavelength infrared photodetector with 2D subwavelength hole array in gold film
Rigorous optical modelling of long-wavelength infrared photodetector with 2D subwavelength hole array in gold film Open
The quantum efficiency of an InAs/InAsSb type-II superlattice (T2SL) high operating temperature (HOT) long-wavelength infrared (LWIR) photodetector may be significantly improved by integrating a two-dimensional subwavelength hole array in …
View article: A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications
A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications Open
A readout IC (ROIC) designed for high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The ROIC is designed for higher Ge content SiGe microbolometers which have higher detector resistance (~1M Ω) and higher T…
View article: Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity
Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity Open
This paper presents the physical device modeling of a Si/Si1-xGex multi-quantum well (MQW) detector to optimize the Ge content in the Si/Si1-xGex well required to enhance thermal sensitivity for a potential microbolometer application. The …
View article: Highly efficient MIM diodes for NIR and SWIR applications
Highly efficient MIM diodes for NIR and SWIR applications Open
Metal-insulator-metal (MIM) diodes are highly considered in high frequency applications in form of rectennas for energy harvesting applications due to their fast speed, small size, and ease of fabrication and IC compatibility. In these dio…
View article: A low-power CMOS readout IC design for bolometer applications
A low-power CMOS readout IC design for bolometer applications Open
A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pix…
View article: A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs
A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs Open
A 32x32 prototype of a digital readout IC (DROIC) for medium-wave infrared focal plane arrays (MWIR IR-FPAs) is presented. The DROIC employs in-pixel photocurrent to digital conversion based on a pulse frequency modulation (PFM) loop and b…
View article: A PFM based digital pixel with off-pixel residue measurement for 15μm pitch MWIR FPAs
A PFM based digital pixel with off-pixel residue measurement for 15μm pitch MWIR FPAs Open
Digital pixels based on pulse frequency modulation (PFM) employ counting techniques to achieve very high charge handling capability compared to their analog counterparts. Moreover, extended counting methods making use of leftover charge (r…