P. Chavarkar
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View article: Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer Open
A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer o…