Explanipedia

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K Open

T. Laurent, Rajesh Sharma, J. Torres, P. Nouvel, S. Blin , et al. · 2011

International audience

Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells Open

T. Laurent, Rajesh Sharma, J. Torres, P. Nouvel, S. Blin , et al. · 2011

International audience

Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells Open

T. Laurent, P. Nouvel, J. Torres, L Chusseau, C. Palermo , et al. · 2009

International audience

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy Open

Éric Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart, Zs. Makkai , et al. · 2002

Direct observation of the core structures of threading dislocations in GaN Open

Yan Xin, S. J. Pennycook, Nigel D. Browning, P.D. Nellist, S. Sivananthan , et al. · 1998

Here we present the first direct observation of the atomic structure of threading dislocation cores in hexagonal GaN. Using atomic-resolution Z-contrast imaging, dislocations with edge character are found to exhibit an eight-fold ring core…

Direct observation of threading dislocations in GaN by high-resolution Z-contrast imaging Open

Yan Xin, Nigel D. Browning, S. Sivananthan, S. J. Pennycook, P.D. Nellist , et al. · 1998

Wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers. One interesting issue concerning GaN is that the material is…

Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature Open

C. Guénaud, Emmanuelle Deleporte, M. Voos, C. Delalande, B. Beaumont , et al. · 1997

Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE Open

M. Leroux, B. Beaumont, N. Grandjean, P. Gibart, J. Massies , et al. · 1996

This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique. The luminescence of Mg doped…

Reflectivity, transport and magneto-optical studies of holes in the p-type HgZnTe/CdTe superlattice Open

Jihun Choi, J. R. Meyer, C. A. Hoffman, G. Karczewski, J. K. Furdyna , et al. · 1994

We report the first systematic experimental investigation of the anomalous properties of holes in a p-type HgZnTe/CdTe superlattice by performing reflectivity, transport and magneto-optical measurements. The transport and cyclotron resonan…

Carrier recombination in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy Open

P. S. Wijewarnasuriya, M. D. Lange, S. Sivananthan, J. P. Faurie · 1994

We report the recombination mechanisms of minority carrier lifetime in indium-doped layers of (211)B Hg1−xCdxTe(x ≊ 23.0% ± 2.0%)n-type grown by molecular beam epitaxy. Measured lifetimes were explained by an Auger limited band-to-band rec…

Fast photoconductor CdTe detectors for synchrotron x ray studies Open

Sung-Shik Yoo, J. P. Faurie, Kemei Wang, P. A. Montano, Qiang Huang , et al. · 1993

The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bu…

Shubnikov–de Haas oscillations on as-grown and annealed molecular-beam-epitaxy-grown Hg1−xCdxTe alloys doped with indium Open

Sir B. Rafol, P. S. Wijewarnasuriya, I. K. Sou, S. Sivananthan, J. P. Faurie · 1993

Transverse resistivity ρxx, longitudinal resistivity ρzz, and Hall resistivity ρxy on heavily indium-doped as-grown and annealed Hg1−xCdxTe (0.24<x<34) alloys in a magnetic field up to 12 T and temperature range 1.2–25 K have been me…

Response to ‘‘Comment on ‘Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates’ ’’ Open

M. D. Lange, R. Sporken, K. K. Mahavadi, J. P. Faurie, Yoshio Nakamura , et al. · 1991

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Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces Open

J. L. Shaw, L. J. Brillson, S. Sivananthan, J. P. Faurie · 1990

We have used deep level photoluminescence spectroscopy to investigate the surface electronic quality of molecular beam epitaxy (MBE) grown CdTe layers during ultrahigh vacuum cleaning. Spectra are highly sensitive to heat treatment, contam…

Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100) Open

John L. Reno, P. L. Gourley, G. Monfroy, J. P. Faurie · 1988

CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x-ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown …

MAGNETO-OPTICAL STUDY OF A HgMnTe-CdTe SUPERLATTICE Open

G. S. Boebinger, Y. Guldner, Jean‐Marc Berroir, M. Voos, J. P. Vieren , et al. · 1987

Cyclotron resonance and interband transitions are observed in far infrared and infrared magneto-absorption experiments on a HgMnTe-CdTe superlattice for temperatures from 1.5K to 10K. The cyclotron resonance transitions display temparture-…

ELECTRON TRANSFER IN Hg1-xCdxTe-CdTe HETEROSTRUCTURES Open

G. S. Boebinger, J. P. Vieren, Y. Guldner, M. Voos, J. P. Faurie · 1987

Far infrared magneto-absorption experiments performed at 1.6K in HgCdTe-CdTe heterojunctions show that a two-dimensional electron gas is formed in the HgCdTe layer at the HgCdTe-CdTe interface. The electron effective masses of the two popu…

Magnetotransport measurements of p-type Hg1−xCdxTe based superlattices and heterojunctions Open

K. C. Woo, Sir B. Rafol, J. P. Faurie · 1987

Magnetotransport measurements are made on p-type type III and type I Hg1−xCdxTe –CdTe superlattices and type III HgTe–Hg1−xCdxTe heterojunctions at high magnetic fields and low temperatures. Quantized Hall effects are observed in type III …

Linearity (Commutativity and Transitivity) of Valence-Band Discontinuity in Heterojunctions with Te-based II-VI Semiconductors: CdTe, HgTe, and ZnTe Open

Trần Minh Đức, C. Hsu, J. P. Faurie · 1987

Erratum: Layer intermixing in HgTe-CdTe superlattices [Appl. Phys. Lett. 4 8, 1588 (1986)] Open

D.K. Arch, J.-L. Staudenmann, J. P. Faurie · 1986

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Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy Open

C. Hsu, S. Sivananthan, Xiangfeng Chu, J. P. Faurie · 1986

Since the crystallographic polarity of the CdTe(111) buffer layer can change the growth conditions of HgCdTe, HgMnTe, and HgZnTe, it is important to know the polarity of the terminating of the CdTe(111)∥GaAs(100) substrates. It is especial…

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