P. Ressel
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View article: Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers
Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers Open
High power, compact, red edge-emitting lasers based on GaInP quantum wells are desirable for applications such as laser display technologies or two-photon upconversion. Here, we investigate the influence of passivation methods on the perfo…
View article: Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum
Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum Open
Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in …
View article: 783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power
783 nm wavelength stabilized DBR tapered diode lasers with a 7 W output power Open
Wavelength stabilized distributed Bragg reflector (DBR) tapered diode lasers at 783 nm will be presented. The devices are based on GaAsP single quantum wells embedded in a large optical cavity leading to a vertical far field angle of about…
View article: Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976 nm
Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976 nm Open
Passive S-bend waveguides have been thoroughly studied in the past, however active S-bend structures such as those in Y-branch distributed Bragg reflector (DBR) ridge waveguide (RW) lasers have been paid little attention. In this work, dif…
View article: Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power
Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power Open
The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various …
View article: Extended 97 nm tuning range in a MOPA system with a tunable dual grating Y-branch laser
Extended 97 nm tuning range in a MOPA system with a tunable dual grating Y-branch laser Open
In this Letter, we present a tunable Y-branch hybrid master oscillator power amplifier (MOPA) with 5.5 W output power, emitting between 973.7 and 983.4 nm. The MO is a monolithic Y-branch distributed Bragg reflector (DBR) diode laser, whic…
View article: Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability
Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability Open
A hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W output power at 971.8 nm is presented. It consists of a distributed Bragg reflector (DBR) laser, which is collimated and focused into a tapered amplifier using cylind…
View article: Dual-wavelength diode laser with electrically adjustable wavelength distance at 785 nm
Dual-wavelength diode laser with electrically adjustable wavelength distance at 785 nm Open
A spectrally adjustable monolithic dual-wavelength diode laser at 785 nm as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS) is presented. The spectral distance between the two excitation wavelengths …