Pao-Chuan Shih
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View article: Degradation of GaN field emitter arrays induced by O2 exposure
Degradation of GaN field emitter arrays induced by O2 exposure Open
Field emitter arrays (FEAs) have the potential to operate at high frequencies and in harsh environments. However, they have been shown to degrade under oxidizing environments. Studying the effect of O2 on FEAs can help to understand the de…
View article: Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors
Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors Open
Field-emission-based vacuum transistors have been proposed as promising candidates for future high-power and harsh-environment electronic devices. However, the lack of an integrated anode is still an issue for vertical field-emission vacuu…
View article: GaN Field Emitter Arrays with JA of 10 A/cm<sup>2</sup> at V<sub>GE</sub> = 50 V for Power Applications
GaN Field Emitter Arrays with JA of 10 A/cm<sup>2</sup> at V<sub>GE</sub> = 50 V for Power Applications Open
2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA
View article: Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays
Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays Open
AlGaN alloys are promising for field emission devices due to their low electron affinities. However, there have been limited demonstrations of AlGaN vacuum transistors so far. This paper combines a new self-alignedgate (SAG) process and di…
View article: Wet-based digital etching on GaN and AlGaN
Wet-based digital etching on GaN and AlGaN Open
Many advanced III-nitride devices, such as micro-LEDs, vertical FinFETs, and field emitters, require the fabrication of high aspect ratio vertical pillars or nanowires. Two-step etchings combining dry and wet etching steps have been used o…
View article: Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process Open
Department of Defense (DoD)
View article: GaN Nanowire Field Emitters with a Self-Aligned Gate Process
GaN Nanowire Field Emitters with a Self-Aligned Gate Process Open
Electron devices based on field emitters (FE) are promising for harsh-environments and high-frequency electronics thanks to their radiation hardness and scattering-free electron transport. Si field emitters with a sub-10 nm tip radius and …