Pascal Hille
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View article: Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires
Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires Open
A pronounced polarization anisotropy and spectral red-shift of the emission wavelength of individual InGaN nanowires is attributed to the spontaneous formation of superlattices caused by inhomogeneous In-distribution in the wires.
View article: Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures
Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures Open
Light emitting diodes represent a key technology that can be found in many areas of everydays life. Therefore, the improvement of the efficiency of such structures offers a high economic and ecological potential. One approach is electrosta…
View article: Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO<sub>2</sub> Layers at Low Temperatures
Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO<sub>2</sub> Layers at Low Temperatures Open
An optical in situ strategy for the analysis of oxygen diffusion in ultrathin ceria layers with a thickness of 2–10 nm at temperatures between 50 and 200 °C is presented, which allows for the determination of diffusion coefficients. This m…
View article: Suppression of the quantum-confined Stark effect in polar nitride heterostructures
Suppression of the quantum-confined Stark effect in polar nitride heterostructures Open
Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppr…
View article: Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template
Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template Open
One-dimensional GaN quantum-wires grown on nanowire templates exhibit bright and sharp luminescence due to carrier transfer from the nanowire cores.
View article: Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires
Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires Open
An experimental strategy to assess the influence of ultra-thin oxide coatings on the performance of InGaN nanowire photoanodes is demonstrated.
View article: Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design Open
Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconducto…
View article: Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors Open
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias lea…
View article: <scp>3D</scp> Investigation of <scp>InGaN</scp> Nanodisks in <scp>GaN</scp> Nanowires
<span>3D</span> Investigation of <span>InGaN</span> Nanodisks in <span>GaN</span> Nanowires Open
Nanoscaled structures like nanowires (NWs) can influence device characteristics (e.g. higher internal efficiency [1]), making them very suitable for the application in optoelectronic devices. Complex structures like InGaN nanodisks (NDs) e…
View article: UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices Open
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional G…
View article: Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors
Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors Open
In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity o…
View article: Long-lived excitons in GaN/AlN nanowire heterostructures
Long-lived excitons in GaN/AlN nanowire heterostructures Open
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay\ntimes on the order of microseconds that persist up to room temperature. Doping\nthe GaN nanodisk insertions with Ge can reduce these PL decay times by two\norders …