Pascal Stasner
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View article: Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses
Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses Open
Redox-based resistive random access memory (ReRAM) has emerged as a promising technology for next-generation non-volatile memory and neuromorphic computing applications. Among the various ReRAM types, valence change mechanism (VCM) based d…
View article: Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales
Evaluation Methods for ReRAM Potentiation on Sub-Nanosecond Timescales Open
View article: Full factorial analysis of gradual switching in thermally oxidized memristive devices
Full factorial analysis of gradual switching in thermally oxidized memristive devices Open
Memristive devices are promising candidates for synaptic memories in neuromorphic computing systems, but the insufficient reliability of the analog behavior has been a challenge. Lateral oxide scaling with bottom-up technologies such as th…
View article: Unveiling Conductance States in ReRAM Cells through Analysis of Ultra-Fast Pulse Sequences
Unveiling Conductance States in ReRAM Cells through Analysis of Ultra-Fast Pulse Sequences Open
Neuromorphic computing, inspired by the processing capabilities of the brain, aims to overcome the limitations of conventional computing architectures.Valence change memory (VCM), along with other emerging resistive random access memory (R…
View article: Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices Open
We fabricate a nano-device that laterally confines the switching oxide and filament to 10 nm. Electrical measurements demonstrate lower variability and reduced ionic noise compared to unconfined filaments, which is supported by our 3D simu…
View article: Intrinsic RESET Speed Limit of Valence Change Memories
Intrinsic RESET Speed Limit of Valence Change Memories Open
During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information is stored in a high resistive state (logcial '0', HRS) and a…