Explanipedia

Efficient integration of self-assembled organic monolayer tunnel barriers in large area pinhole-free magnetic tunnel junctions Open

Soraya Ababou‐Girard, Philippe Schieffer, F. Solal, Pascal Turban · 2025

Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at ferroma…

Bilayer orthogonal ferromagnetism in CrTe2-based van der Waals system Open

Chiara Bigi, C. Jego, Vincent Polewczyk, Alessandro De Vita, T. Jaouen , et al. · 2025

Bilayer orthogonal ferromagnetism in CrTe$_2$-based van der Waals system Open

Chiara Bigi, C. Jego, Vincent Polewczyk, Alessandro De Vita, T. Jaouen , et al. · 2024

Systems with pronounced spin anisotropy play a pivotal role in advancing magnetization switching and spin-wave generation mechanisms, which are fundamental for spintronic technologies. Quasi-van der Waals ferromagnets, particularly Cr$_{1+…

Pomeranchuk instability from electronic correlations in CsTi$_3$Bi$_5$ kagome metal Open

Chiara Bigi, Matteo Dürrnagel, Lennart Klebl, Armando Consiglio, Ganesh Pokharel , et al. · 2024

Among many-body instabilities in correlated quantum systems, electronic nematicity, defined by the spontaneous breaking of rotational symmetry, has emerged as a critical phenomenon, particularly within high-temperature superconductors. Rec…

Croissance et caractérisations multi-échelle de jonctions tunnel hybrides : vers le contrôle des "spinterfaces" Open

Maryam Sadeghiyan Dehaghani, Sophie Guézo, Rozenn Bernard, Sylvain Tricot, Bruno Lépine , et al. · 2023

Magneto-transport properties in hybrid magnetic tunnel junctions integrating a self-assembled monolayer (SAM) as a tunnel barrier are intimately governed by the electronic properties at the ferromagnets (FM)/molecules interfaces or so-call…

Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics Open

Bienlo Flora Christine Zerbo, M. Modreanu, Ian M. Povey, Jun Lin, A. Létoublon , et al. · 2022

Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfid…

Poly(vinylidene fluoride)-Stabilized Black γ-Phase CsPbI<sub>3</sub> Perovskite for High-Performance Piezoelectric Nanogenerators Open

Weiguang Zhu, Asif Abdullah Khan, Md. Masud Rana, Rozenn Gautheron-Bernard, Nicolas R. Tanguy , et al. · 2022

Halide perovskite materials have been recently recognized as promising materials for piezoelectric nanogenerators (PENGs) due to their potentially strong ferroelectricity and piezoelectricity. Here, we report a new method using a poly(viny…

Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties Open

Lipin Chen, Yoan Léger, Gabriel Loget, Mekan Piriyev, Imen Jadli , et al. · 2021

Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid st…

Origin of weak Fermi level pinning at the graphene/silicon interface Open

Jules Courtin, Sylvain Tricot, Gabriel Delhaye, Pascal Turban, Bruno Lépine , et al. · 2020

International audience

Achieving Ultrahigh Piezoelectricity in Organic–Inorganic Vacancy-Ordered Halide Double Perovskites for Mechanical Energy Harvesting Open

Guangguang Huang, Asif Abdullah Khan, Md. Masud Rana, Chao Xu, Shuhong Xu , et al. · 2020

International audience

Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation Open

Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot , et al. · 2019

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van d…

CCDC 1901701: Experimental Crystal Structure Determination Open

Mikaël Képénékian, Yann Molard, Karine Costuas, Pierric Lemoine, Régis Gautier , et al. · 2019

A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions Open

Jules Courtin, Sylvain Le Gall, Pascal Chrétien, Alain Moréac, Gabriel Delhaye , et al. · 2019

ResiScope mapping showing the strong reduction of resistance induced by a graphene sheet inserted between silicon and gold.

Red-NIR luminescence of Mo<sub>6</sub> monolayered assembly directly anchored on Au(001) Open

Mikaël Képénékian, Yann Molard, Karine Costuas, Pierric Lemoine, Régis Gautier , et al. · 2019

The designed cluster [Mo₆Bri8(NCS)a6]²⁻ retains its multicomponent near infrared emission despite being in direct contact with a crystalline gold surface.

A Stress‐Free and Textured GaP Template on Silicon for Solar Water Splitting Open

Ida Lucci, Simon Charbonnier, Maxime Vallet, Pascal Turban, Yoan Léger , et al. · 2018

This work shows that a large‐scale textured GaP template monolithically integrated on Si can be developed by using surface energy engineering, for water‐splitting applications. The stability of (114)A facets is first shown, based on scanni…

Oxidation mechanism of thin Cu films: A gateway towards the formation of single oxide phase Open

Sumita Choudhary, J. V. N. Sarma, Surojit Pande, Soraya Ababou‐Girard, Pascal Turban , et al. · 2018

Controlled thermal oxidations of thin copper films at relatively lower temperatures (up to 500°C) leading towards the formation of a single phase of copper oxide are investigated where the oxidation temperature, duration, oxygen partial pr…

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots Open

C. Robert, K. Pereira da Silva, M. O. Nestoklon, M. I. Alonso, Pascal Turban , et al. · 2016

We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled a…

X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon Open

Yanping Wang, Antoine Létoublon, Ida Lucci, Charles Cornet, V. Favre‐Nicolin , et al. · 2016

Self-organized homo-epitaxial growth of (001) vanadium assisted by oxygen surface reconstruction Open

Stéphane Andrieu, Pascal Turban, B. Kierren · 2016

GaP/Si Antiphase domains annihilation at the early stages of growth Open

Rozenn Bernard, Yanping Wang, Mounib Bahri, Thanh Tra Nguyen, Ronan Tremblay , et al. · 2015

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