Patrick Liebisch
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View article: Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates Open
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate stru…
View article: Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates Open
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate stru…
On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors Open
We investigate the operation of dual-gate reconfigurable field-effect\ntransistor (RFET) in the programgate at drain (PGAD) and program-gate at source\n(PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are\nfabrica…