Patrick Palmer
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View article: EV-CPW: EV Charging Profiles and Waveforms
EV-CPW: EV Charging Profiles and Waveforms Open
The rapid growth of electric vehicle (EV) charging will present challenges to electrical distribution networks and will affect grid operation and reliability. In order to improve the understanding of EV charging behaviour, we present the o…
View article: EV Charging Profiles and Waveforms Dataset (EV-CPW) and Associated Power Quality Analysis
EV Charging Profiles and Waveforms Dataset (EV-CPW) and Associated Power Quality Analysis Open
The rapid growth of electric vehicle (EV) charging will present challenges to electrical distribution networks and will affect grid operation and reliability. In order to improve the understanding of EV charging behaviour, we present the o…
View article: A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification
A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification Open
We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A. Each transistor is mounted on an identical PCB and driven b…
View article: Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application
Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application Open
This study presents a physics‐based compact model of the integrated gate‐commutated thyristor (IGCT) with multiple effects for the high‐power application. The proposed model has both acceptable accuracy and computation time requirement, wh…
View article: Low inductance switching for SiC MOSFET based power circuit
Low inductance switching for SiC MOSFET based power circuit Open
Wide Band Gap power semiconductor switching devices offer superior performance compared to an equivalent Si power device. SiC MOSFETs can be competitive when compared to Si IGBTs of the same voltage class, whilst offering greater benefits …
View article: Optimization of operation temperature of gate commutated thyristors for hybrid DC breaker
Optimization of operation temperature of gate commutated thyristors for hybrid DC breaker Open
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Thyristors (IGCTs) are widely used in high voltage HCBs due to their controllable turn-off capabilities under high power conditions. The focu…
View article: Design and measurement considerations for WBG switching circuits
Design and measurement considerations for WBG switching circuits Open
Wide Band Gap (WBG) transistors using materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer superior electrical and thermal properties, as well as fast switching capability. However, the high dv/dt and high di/dt may caus…
View article: Optimisation of gate‐commutated thyristors for hybrid DC breakers
Optimisation of gate‐commutated thyristors for hybrid DC breakers Open
Hybrid DC breakers (HCBs) are crucial components in modern DC systems. Integrated gate‐commutated thyristors (IGCTs) are widely used in high‐voltage HCBs due to their controllable turn‐off capabilities under high‐power conditions. The focu…
View article: Physical Investigation Into Effective Voltage Balancing by Temporary Clamp Technique for the Series Connection of IGBTs
Physical Investigation Into Effective Voltage Balancing by Temporary Clamp Technique for the Series Connection of IGBTs Open
The series connection of IGBTs is essential for high-voltage applications where fast switching performances need to be maintained. However, unbalanced voltage sharing is a major resistance to the converter application of this structure. Th…