Patrick Schygulla
YOU?
Author Swipe
View article: Revealing charge carrier transport and selectivity losses in perovskite silicon tandem solar cells
Revealing charge carrier transport and selectivity losses in perovskite silicon tandem solar cells Open
Monolithic perovskite silicon tandem solar cells reach efficiencies beyond the theoretical efficiency limit of silicon single-junction solar cells. However, the metastability of perovskite materials and the increasing number of functional …
View article: Optimization of GaInP absorber design for indoor photovoltaic conversion efficiency above 40%
Optimization of GaInP absorber design for indoor photovoltaic conversion efficiency above 40% Open
Indoor photovoltaics (IPV) is a key technology for powering low-energy electronics, particularly Internet of Things devices, where wired power or frequent battery replacements are impractical. IPV cells convert artificial indoor light into…
View article: Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells
Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells Open
The reduction of the series resistance in multi‐junction solar cells is of high importance for attaining peak efficiencies in concentrator photovoltaics. This study showcases strategies to reduce the sheet resistance of the uppermost subce…
View article: Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g
Wafer‐bonded two‐terminal III‐V//Si triple‐junction solar cell with power conversion efficiency of 36.1% at AM1.5g Open
In this work, we present the fabrication and analysis of a wafer‐bonded GaInP/GaInAsP//Si triple‐junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new cell design presents an improvement over prev…
View article: Off-Axis Electron Holography of In-Situ-Biased Highly-Doped p-AlGaAs/n-GaInP Junctions for Solar Cell Applications
Off-Axis Electron Holography of In-Situ-Biased Highly-Doped p-AlGaAs/n-GaInP Junctions for Solar Cell Applications Open
View article: Recent progress in monolithic two-terminal perovskite-based triple-junction solar cells
Recent progress in monolithic two-terminal perovskite-based triple-junction solar cells Open
Monolithic perovskite-based triple junction solar cells have the potential to surpass the power conversion efficiency (PCE) limits of single and dual-junction solar cells.
View article: Nanopatterned Back-Reflector with Engineered Near-Field/Far-Field Light Scattering for Enhanced Light Trapping in Silicon-Based Multijunction Solar Cells
Nanopatterned Back-Reflector with Engineered Near-Field/Far-Field Light Scattering for Enhanced Light Trapping in Silicon-Based Multijunction Solar Cells Open
Multijunction solar cells provide a path to overcome the efficiency limits of standard silicon solar cells by harvesting a broader range of the solar spectrum more efficiently. However, Si-based multijunction architectures are hindered by …
View article: Mask and plate: a scalable front metallization with low-cost potential for III–V-based tandem solar cells enabling 31.6 % conversion efficiency
Mask and plate: a scalable front metallization with low-cost potential for III–V-based tandem solar cells enabling 31.6 % conversion efficiency Open
Low-cost approaches for mass production of III–V-based photovoltaics are highly desired today. For the first time, this work presents industrially relevant mask and plate for front metallization of III–V-based solar cells replacing expensi…
View article: Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells
Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells Open
Multi-junction solar cells provide a path to overcome the efficiency limits of standard silicon solar cells by harvesting more efficiently a broader range of the solar spectrum. However, Si-based multi-junction architectures are hindered b…
View article: Revealing fundamentals of charge extraction in photovoltaic devices through potentiostatic photoluminescence imaging
Revealing fundamentals of charge extraction in photovoltaic devices through potentiostatic photoluminescence imaging Open
The photocurrent density-voltage (J(V)) curve is the fundamental characteristic to assess opto-electronic devices, in particular solar cells. However, it only yields information on the performance inte-grated over the entire active device …
View article: Increasing transferability between design and epitaxial growth of multi-junction solar cells
Increasing transferability between design and epitaxial growth of multi-junction solar cells Open
In this work we report on a procedure to increase the reproducibility of multi-junction solar cell growth. This is achieved by applying a systematic offset to room-temperature photoluminescence measurement to match the required band gap fo…
View article: Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g
Two‐terminal III–V//Si triple‐junction solar cell with power conversion efficiency of 35.9 % at AM1.5g Open
III–V//Si multijunction solar cells offer a pathway to increase the power conversion efficiency beyond the fundamental Auger limit of silicon single‐junctions. In this work, we demonstrate how the efficiency of a two‐terminal wafer‐bonded …
View article: Revealing Fundamentals of Charge Extraction in Photovoltaic Devices Through Potentiostatic Photoluminescence Imaging
Revealing Fundamentals of Charge Extraction in Photovoltaic Devices Through Potentiostatic Photoluminescence Imaging Open
The photocurrent density-voltage ( J ( V )) curve is the fundamental characteristic to assess opto-electronic devices, in particular solar cells. However, it only yields information on the performance integrated over the entire active devi…
View article: Revealing Fundamentals of Charge Extraction in Photovoltaic Devices Through Potentiostatic Photoluminescence Imaging
Revealing Fundamentals of Charge Extraction in Photovoltaic Devices Through Potentiostatic Photoluminescence Imaging Open
The photocurrent density-voltage (J(V)) curve is the fundamental characteristic to assess opto-electronic devices, in particular solar cells. However, it only yields information on the performance integrated over the entire active device a…
View article: Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells
Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells Open
This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar ce…
View article: Approaches for High-Efficiency III-V/Si Tandem Solar Cells
Approaches for High-Efficiency III-V/Si Tandem Solar Cells Open
The Si tandem solar cells are very attractive for realizing high efficiency and low cost. This paper overviews current status of III-V/Si tandem solar cells including our results. The analytical results for efficiency potential of Si tande…
View article: Determination of the complex refractive index of compound semiconductor alloys for optical device modelling
Determination of the complex refractive index of compound semiconductor alloys for optical device modelling Open
In this paper a method is presented to accurately and quickly interpolate a dataset of the complex refractive index of arbitrary compound semiconductors. The method is based on a parameter morphing algorithm which maps critical points of t…
View article: Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%
Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1% Open
The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonde…
View article: 34.1 % Efficient GaInP/AlGaAs//Si Tandem Cell
34.1 % Efficient GaInP/AlGaAs//Si Tandem Cell Open
III-V/Si tandem solar cells are investigated as a promising solution to increase the power output of photovoltaic modules under terrestrial sunlight conditions. Over the last years, we have developed a wafer-bonded GaInP/AlGaAs//Si triple-…