Patrick Verdonck
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View article: Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures Open
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive an…
View article: Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions
Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions Open
Ruthenium (Ru) is a noble metal and is known to be resistant to many common chemicals and mixtures. We report in this study a controlled etching/recessing of Ru via wet processing and a combination of dry and wet process using metal-free c…
View article: Physical characterization of hafnium aluminates dielectrics deposited by atomic layer deposition
Physical characterization of hafnium aluminates dielectrics deposited by atomic layer deposition Open
Hafnium aluminates films with 50 mol% of Hf were deposited onto Si(100) using atomic layer deposition. The films were annealed by RTP at 1000 oC for 60 s in pure N2 or N2+5%O2 and by LASER at 1200oC for 1ms in pure N2. Then, they were char…
View article: Plasma Parameters Obtained with Planar Probe and Optical Emission Spectroscopy
Plasma Parameters Obtained with Planar Probe and Optical Emission Spectroscopy Open
A planar probe and optical emission spectroscopy were employed to analyze parameters in an inductively coupled plasma (ICP). The analyses were performed in Ar, Ar+SF6 and O2 plasmas at 40 mTorr. Typical probe results indicate an ion curren…
View article: Study of Power Balance in Electronegative Capacitively Coupled Plasmas
Study of Power Balance in Electronegative Capacitively Coupled Plasmas Open
The balance of power model is a relatively simple model, which determines the power dissipated both in the plasma bulk and in the plasma sheath, as well as the ion flux and the average energy lost by an electron in the plasma bulk. It requ…
View article: Comparative study between wet and dry etching of silicon for microchannels fabrication
Comparative study between wet and dry etching of silicon for microchannels fabrication Open
In this work we present a comparative study of two processes for the fabrication of an array of microchannels for microfluidics applications, based on integrated-circuit technology process steps, such as lithography and dry etching. Two di…
View article: Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding
Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding Open
Surface activated bonding is more and more attractive as a key technology to realize higher performance CMOS devices independent of scaling. The major challenge of dielectric bonding is to decrease the process temperature in order to be co…
View article: Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism Open
© 2018 American Chemical Society. When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS 2 ) are grown by atomic layer deposition (ALD) for atomic growth control at low deposition temperatures (≤…
View article: Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates Open
The structure, crystallinity, and properties of as-deposited two-dimensional (2D) transition metal dichalcogenides are determined by nucleation mechanisms in the deposition process. 2D materials grown by atomic layer deposition (ALD) in th…
View article: Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS<sub>2</sub> from WF<sub>6</sub>, H<sub>2</sub> Plasma, and H<sub>2</sub>S
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS<sub>2</sub> from WF<sub>6</sub>, H<sub>2</sub> Plasma, and H<sub>2</sub>S Open
Two-dimensional (2D) transition metal dichalcogenides are potential low dissipative semiconductor materials for nanoelectronic devices. Such applications require the deposition of these materials in their crystalline form and with controll…