Pere Roca i Cabarrocas
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View article: Effects of Pressure on Optoelectronic Properties of Perovskite Thin Films Fabricated via Radio Frequency Sputtering
Effects of Pressure on Optoelectronic Properties of Perovskite Thin Films Fabricated via Radio Frequency Sputtering Open
Perovskite thin films were fabricated via the radio frequency (RF) sputtering process, which could provide great control over the crystal structure and uniformity of the films. Lead sulfide was chosen as a precursor for the lead source and…
View article: Plasma-Driven Solid–Liquid Dynamics in Cu–Sn Catalysts and Nucleation of Silicon Nanowires Revealed by Environmental TEM
Plasma-Driven Solid–Liquid Dynamics in Cu–Sn Catalysts and Nucleation of Silicon Nanowires Revealed by Environmental TEM Open
We employ environmental TEM to observe phase transitions driven by plasma radicals, in Cu-Sn catalysts for silicon nanowire (SiNW) growth. Previously unrecognized solid-liquid dynamics enables the stable growth of ultrathin (∼7 nm) SiNWs w…
View article: Exploring the Dynamics of Sn Droplets on Hydrogenated Amorphous Si and Ge Layers for Nanocrystal Design
Exploring the Dynamics of Sn Droplets on Hydrogenated Amorphous Si and Ge Layers for Nanocrystal Design Open
International audience
View article: Amorphous GaN matrix embedded nanocrystals exhibiting bulk bandgap luminescence
Amorphous GaN matrix embedded nanocrystals exhibiting bulk bandgap luminescence Open
This work reports on the room temperature sputtering growth of gallium nitride thin films, exhibiting band edge luminescence without thermal annealing or post-deposition processing. In particular, we investigate and correlate their lumines…
View article: Chemical transport-based growth of Si and SiGe nanowires
Chemical transport-based growth of Si and SiGe nanowires Open
This study investigates the chemical transport-based growth of Si and Ge nanowires (NWs) using plasma-enhanced chemical vapor deposition. We found that Si NW growth requires a high etching temperature of 400 °C, related to a stronger Si–H …
View article: Insights into the growth of GaN thin films through liquid gallium sputtering: A plasma-film combined analysis
Insights into the growth of GaN thin films through liquid gallium sputtering: A plasma-film combined analysis Open
This study presents the detailed characterization of a magnetron-based Ar–N2 plasma discharge used to sputter a liquid Ga target for the deposition of gallium nitride (GaN) thin films. By utilizing in situ diagnostic techniques including o…
View article: Optoelectronic properties of perovskite thin films derived from lead sulfide via radio frequency magnetron sputtering: effect of the substrate temperature
Optoelectronic properties of perovskite thin films derived from lead sulfide via radio frequency magnetron sputtering: effect of the substrate temperature Open
Methylammonium lead iodide (CH 3 NH 3 PbI 3 ; MAPbI 3 ) films were fabricated from sputtered lead sulfide (PbS) films prepared at various substrate temperatures according to the Thornton structural zone model. PbS films were converted to l…
View article: Effect of an artificial cavity on the microlayer and contact line dynamics during bubble growth in nucleate boiling
Effect of an artificial cavity on the microlayer and contact line dynamics during bubble growth in nucleate boiling Open
We present an experimental study on the near-wall phenomena during the growth of a single bubble in saturated pool boiling of water at atmospheric pressure. Our focus is on the dynamics of triple contact line and liquid microlayer that can…
View article: Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD
Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD Open
We report on low-temperature (500 °C) and low-pressure (0.3 mbar) direct growth of GaN thin films on silicon (100) substrates using remote plasma chemical vapour deposition (RP-CVD). In the custom-designed reactor, an RF inductively couple…
View article: Development of n-Type, Passivating Nanocrystalline Silicon Oxide Films via Plasma-Enhanced Chemical Vapor Deposition
Development of n-Type, Passivating Nanocrystalline Silicon Oxide Films via Plasma-Enhanced Chemical Vapor Deposition Open
Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with varied applications in solar cells as a transparent front contact, intermediate reflector, back reflector layer, and even tunnel layer for passivating contacts, owin…
View article: Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition
Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride deposition Open
Low-pressure plasmas, in particular magnetron sputtering discharges, are increasingly used for the deposition of wideband gap semiconductor nitrides films (e.g., GaN or AlN) considering many benefits they exhibit with respect to convention…
View article: Development of n-type, Passivating Nanocrystalline Silicon Oxide (nc-SiOx:H) Films via PECVD
Development of n-type, Passivating Nanocrystalline Silicon Oxide (nc-SiOx:H) Films via PECVD Open
Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with its varied application in solar cells as a transparent front contact, intermediate reflector, back reflector layer and even tunnel layer for passivating contacts, ow…
View article: Highly conductive p-type nc-SiOX:H thin films deposited at 130°C via efficient incorporation of plasma synthesized silicon nanocrystals and their application in SHJ solar cells
Highly conductive p-type nc-SiOX:H thin films deposited at 130°C via efficient incorporation of plasma synthesized silicon nanocrystals and their application in SHJ solar cells Open
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View article: Epitaxially Grown Crystalline Silicon as Electron Selective Contact Layer for Crystalline Germanium TPV Cells
Epitaxially Grown Crystalline Silicon as Electron Selective Contact Layer for Crystalline Germanium TPV Cells Open
Crystalline germanium has been proposed as a cost-effective absorber for the fabrication of thermophotovoltaic (TPV) cells which require, among other technologies, the development of electron-selective contacts. In this work, we explore th…
View article: A New Design : Three Terminal Band Offset Barrier Organic/Si Tandem Solar Cells
A New Design : Three Terminal Band Offset Barrier Organic/Si Tandem Solar Cells Open
Organic solar cells are particularly attractive for their very low fabrication cost, and lack of use of critical raw materials. While this has to date been hobbled by low efficiency, recent achievements demonstrate organic single junction …
View article: Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions
Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions Open
Boron doping level and boron activation in silicon thin films grown by PECVD under epitaxial (p+ epi‑Si) and microcrystalline (p+ µc-Si) conditions have been investigated as functions of the substrate material and annealing in the range of…
View article: Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature
Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature Open
We report on the successful growth of polycrystalline GaN thin films on Si (100) substrates at room temperature (without intentional heating) using radiofrequency reactive magnetron sputtering. We use Ar and N2 as the main sputtering and N…
View article: Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions
Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions Open
We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that…
View article: Microlayer in nucleate boiling seen as Landau-Levich film with dewetting and evaporation
Microlayer in nucleate boiling seen as Landau-Levich film with dewetting and evaporation Open
Both experimental and theoretical studies on the microscale and fast physical phenomena occurring during the growth of vapor bubbles in nucleate pool boiling are reported. The focus is on the liquid film of micrometric thickness (``microla…
View article: <i>In situ</i> minority carrier lifetime via fast modulated photoluminescence
<i>In situ</i> minority carrier lifetime via fast modulated photoluminescence Open
Modulated photoluminescence (MPL) is a powerful technique for determining the effective minority carrier lifetime ( τ eff ) of semiconductor materials and devices. MPL is based on the measurement of phase shifts between two sinusoidal wave…
View article: Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage
Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage Open
Amorphous Silicon Solar Cells In article number 2200248, Pere Roca i Cabarrocas and co-workers demonstrated triple junction amorphous silicon solar cells grown around silicon nanowires, providing the elevated voltage (>2V) and enhanced eff…
View article: Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires’ Morphology in In Situ TEM
Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires’ Morphology in In Situ TEM Open
We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam a…
View article: Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage
Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage Open
When solar cells are used as the photoanode for direct water splitting, the output voltage required typically exceeds that of a single‐junction photovoltaic device. Toward this application, in this work, triple radial junction silicon nano…