Peter Deeb
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View article: Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants
Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants Open
MeV level aluminum implants into 4H-SiC were performed as part of superjunction diode fabrication. Measurement of resistance test structures produced resistivities well above expected values with large decreases at elevated temperatures. C…