Peter Evanschitzky
YOU?
Author Swipe
View article: Spectro‐Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials
Spectro‐Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials Open
Van der Waals materials and devices incorporating them exhibit highly thickness‐dependent properties. The small lateral dimensions of mechanically exfoliated 2D‐layered flakes, however, remarkably complicate their precise thickness determi…
View article: Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective
Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective Open
Background: The lithographic imaging performance of extreme ultraviolet (EUV) lithography is limited by the efficiency of light diffraction and contrast fading caused by 3D mask effects. The dual monopole concept has been proposed by Joern…
View article: Accurate prediction of EUV lithographic images and 3D mask effects using generative networks
Accurate prediction of EUV lithographic images and 3D mask effects using generative networks Open
Background: As extreme ultraviolet lithography (EUV) lithography has progressed toward feature dimensions smaller than the wavelength, electromagnetic field (EMF) solvers have become indispensable for EUV simulations. Although numerous app…
View article: Mask defect detection with hybrid deep learning network
Mask defect detection with hybrid deep learning network Open
Background: Deep learning is a very fast-growing field in the area of artificial intelligence with remarkable results in recent years. Many works in the lithography and photomask field have shown progress of technology in this application …
View article: Investigation of waveguide modes in EUV mask absorbers
Investigation of waveguide modes in EUV mask absorbers Open
Background: Explaining imaging phenomena in EUV lithography requires more than a single point of view. Traditionally, the diffraction characteristics of EUV masks are analyzed in terms of the amplitude and phase of diffraction orders that …
View article: Perspectives and tradeoffs of absorber materials for high NA EUV lithography
Perspectives and tradeoffs of absorber materials for high NA EUV lithography Open
Next-generation extreme ultraviolet (EUV) systems with numerical apertures of 0.55 have the potential to provide sub-8-nm half-pitch resolution. The increased importance of stochastic effects at smaller feature sizes places further demands…
View article: Process Variability—Technological Challenge and Design Issue for Nanoscale Devices
Process Variability—Technological Challenge and Design Issue for Nanoscale Devices Open
Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. Already for aggressively scaled bulk transistors, both statistical and systematic process vari…
View article: Novel EUV mask absorber evaluation in support of next-generation EUV imaging
Novel EUV mask absorber evaluation in support of next-generation EUV imaging Open
In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation-dependent effects on wafer level will consume a significant part of the lithography budget using the current Ta-based mask. Mask absorber …
View article: Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?
Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects? Open
The understanding, characterization, and mitigation of three-dimensional (3-D) mask effects including telecentricity errors, contrast fading, and best focus shifts become increasingly important for the performance optimization of future ex…
View article: Fourier ptychography for lithography high NA systems
Fourier ptychography for lithography high NA systems Open
The aim of this research is to explore the limits of the basic Ptychography algorithm (FPA) at deep ultra violet (DUV) wavelength of 193 nanometers and for binary and phase shift masks. Furthermore, imaging at high numerical apertures invo…
View article: Efficient simulation of EUV pellicles
Efficient simulation of EUV pellicles Open
The paper presents a new simulation model for the efficient simulation of EUV pellicles. Different pellicle stacks, pellicle deformations and particles on the pellicle can be considered. The model is based on properly designed pupil filter…
View article: Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers
Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers Open
Over the recent years, extreme ultraviolet (EUV) lithography has demonstrated the patterning of ever-shrinking feature sizes (enabling the N7 technology node and below), whereas the EUV mask has remained unaltered, using a 70-nm tantalum (…
View article: Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography
Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography Open
The reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts. The off-axis illumination of the…