Peter Mascher
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View article: Amorphous PbO Photoconductive Film Structure Revealed by Variable-Energy, Doppler-Broadened Positron Annihilation Spectroscopy
Amorphous PbO Photoconductive Film Structure Revealed by Variable-Energy, Doppler-Broadened Positron Annihilation Spectroscopy Open
Photoconductive amorphous selenium (a-Se) layers are utilized in flat panel X-ray imaging detectors as a direct conversion medium, converting X-ray photons directly into electric charge. Commercial a-Se direct conversion Active Matrix Flat…
View article: Investigation of terbium-doped silicon oxide thin films: comparison of TEM images prepared by FIB and mechanical methods
Investigation of terbium-doped silicon oxide thin films: comparison of TEM images prepared by FIB and mechanical methods Open
This study characterizes the optical and structural properties of terbium-doped oxygen-rich silicon oxide (ORSO:Tb) thin films and investigates focused ion beam (FIB)-induced damage on transmission electron microscopy (TEM) lamellae prepar…
View article: Optical and Mechanical Properties of Europium-Doped Silicon Nitride Thin Films Deposited by ECR-PECVD with Magnetron Sputtering
Optical and Mechanical Properties of Europium-Doped Silicon Nitride Thin Films Deposited by ECR-PECVD with Magnetron Sputtering Open
Optical and mechanical properties of europium (Eu)-doped silicon nitride (Si x N y ) films were investigated as a function of the sputtering power applied to the Eu metal target and argon flow into the deposition chamber. Films were fabric…
View article: A thulium-doped tellurite distributed Bragg reflector waveguide laser on a silicon nitride chip
A thulium-doped tellurite distributed Bragg reflector waveguide laser on a silicon nitride chip Open
We show a distributed Bragg reflector laser operating at 1875 nm, using a hybrid silicon nitride photonic chip coated with thulium-doped tellurite glass. The passive laser cavity consists of nominally 50-nm-wide sidewall Bragg gratings dir…
View article: DEMONSTRATION OF PASSIVE, NONLINEAR AND ACTIVE DEVICES ON A HYBRID PHOTONIC PLATFORM
DEMONSTRATION OF PASSIVE, NONLINEAR AND ACTIVE DEVICES ON A HYBRID PHOTONIC PLATFORM Open
The monolithic fabrication of passive, nonlinear, and active functionalities on a single chip is highly desired in the wake of the development and commercialization of integrated photonic platforms. However, the co-integration of diverse f…
View article: A Moderate Confinement O-, S-, C-, and L-Band Silicon Nitride Platform Enabled by a Rapid Prototyping Integrated Photonics Foundry Process
A Moderate Confinement O-, S-, C-, and L-Band Silicon Nitride Platform Enabled by a Rapid Prototyping Integrated Photonics Foundry Process Open
We describe a rapid prototyping process for silicon nitride photonic integrated circuits operating at wavelengths around 1.3 and 1.5 μm. Moderate confinement silicon nitride waveguides and other essential integrated photonic components, su…
View article: Surface acoustic waves Brillouin photonics on a silicon nitride chip
Surface acoustic waves Brillouin photonics on a silicon nitride chip Open
Seamlessly integrating stimulated Brillouin scattering (SBS) in a low-loss and mature photonic integration platform remains a complicated task. Virtually all current approaches fall short in simultaneously achieving strong SBS, low losses,…
View article: Si/Ge phototransistor with responsivity >1000A/W on a silicon photonics platform
Si/Ge phototransistor with responsivity >1000A/W on a silicon photonics platform Open
In this article, we report a Si/Ge waveguide phototransistor with high responsivity and low dark current under low bias voltages, due to an engineered electric field distribution. The photodetector consists of n-i-p-i-n doping regions and …
View article: A comprehensive calibration of integrated magnetron sputtering and plasma enhanced chemical vapor deposition for rare-earth doped thin films
A comprehensive calibration of integrated magnetron sputtering and plasma enhanced chemical vapor deposition for rare-earth doped thin films Open
A new integrated deposition system taking advantage of magnetron sputtering and electron cyclotron-plasma enhanced chemical vapour deposition (IMS ECR-PECVD) is presented that mitigates the drawbacks of each fabrication system. This tailor…
View article: Optical and Structural Properties of Europium-Doped Silicon Oxide Fabricated Using Integrated Sputtering and Chemical Vapour Deposition
Optical and Structural Properties of Europium-Doped Silicon Oxide Fabricated Using Integrated Sputtering and Chemical Vapour Deposition Open
Europium (Eu) doped silicon oxide (SiO x ) thin films containing Eu concentrations of 0.2 to 6.4 at% were fabricated using a hybrid deposition system combining a magnetron sputtering gun serving as the doping source with electron cyclotron…
View article: Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2
Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2 Open
Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity…
View article: On-chip hybrid erbium-doped tellurium oxide-silicon nitride distributed Bragg reflector lasers
On-chip hybrid erbium-doped tellurium oxide-silicon nitride distributed Bragg reflector lasers Open
We demonstrate integrated on-chip erbium-doped tellurite (TeO 2 :Er 3+ ) waveguide lasers fabricated on a wafer-scale silicon nitride platform. A 0.352-µm-thick TeO 2 :Er 3+ coating was deposited as an active medium on 0.2-µm-thick, 1.2- a…
View article: A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane
A Comparative Study of a:SiCN:H Thin Films Fabricated with Acetylene and Methane Open
In this paper we present a comparative study of the properties of amorphous hydrogenated silicon carbonitride (SiCN:H) thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The elementa…
View article: Strain engineering in III-V photonic components through structuration of SiNx films
Strain engineering in III-V photonic components through structuration of SiNx films Open
We describe work to quantify the effects of structured dielectric thin films, such as SiNx, at the surface of III-V semiconductors, in terms of strain engineering with applications to photonic components such as waveguides and lasers. We s…
View article: Influence of Nitrogen on the Luminescence Properties of Ce-Doped SiO<sub>x</sub>N<sub>y</sub>
Influence of Nitrogen on the Luminescence Properties of Ce-Doped SiO<sub>x</sub>N<sub>y</sub> Open
We report wideband photoluminescent emission from cerium-doped silicon oxynitride (Ce-doped SiO x N y ) thin films deposited using electron cyclotron resonance plasma enhanced chemical-vapor deposition (ECR-PECVD). The in situ doping with …
View article: Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides
Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides Open
We report on low-temperature and low-pressure deposition conditions of 140 °C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonan…
View article: Subwavelength grating metamaterial waveguides functionalized with tellurium oxide cladding
Subwavelength grating metamaterial waveguides functionalized with tellurium oxide cladding Open
We report on the design, fabrication and characterization of subwavelength grating metamaterial waveguides coated with tellurium oxide. The structures are first fabricated using a standard CMOS compatible process on a silicon-on-insulator …
View article: X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells
X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells Open
Synchrotron-based experiments in combination with optical measurements were used to explore the potential of a photovoltaic material based on silicon carbonitride (SiCN) thin films, in particular for the use in space solar cells. The large…
View article: Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films
Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films Open
The influence of the substrate temperature and argon gas flow on the compositional, structural, optical, and light emission properties of amorphous hydrogenated silicon carbonitride (a-SiCxNy:H) thin films were studied. Thin films were fab…
View article: Experimental Demonstration of Tunable Directional Scattering of Visible Light from All-Dielectric Asymmetric Dimers
Experimental Demonstration of Tunable Directional Scattering of Visible Light from All-Dielectric Asymmetric Dimers Open
Due to the presence of strong magnetic resonances, high refractive index dielectric nanoantennnas have shown the ability to expand the methods available for controlling electromagnetic waves in the subwavelength region. In this work, we ex…
View article: Vacancy-Induced Ferromagnetic Behavior in Antiferromagnetic NiO Nanoparticles: A Positron Annihilation Study
Vacancy-Induced Ferromagnetic Behavior in Antiferromagnetic NiO Nanoparticles: A Positron Annihilation Study Open
Pure NiO nanoparticles were subjected to isochronal thermal treatments in open air from 100 to 1000°C. X-ray diffraction (XRD) patterns indicate that all annealed samples exhibit a single phase of face-centered cubic (FCC) crystalline stru…
View article: Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts
Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts Open
In this work, the role of the nitrogen content, the annealing temperature, and the sample morphology on the luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films has been investigated. An increasing nitrogen atomic percentage…