Peter Schlupp
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View article: Ultrawide bandgap spinel <i>γ</i>-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films
Ultrawide bandgap spinel <i>γ</i>-(Ga0.8Ge0.2)2O3 alloy semiconductor epitaxial thin films Open
Epitaxial growth of phase-pure and high-quality spinel γ-Ga2O3-based semiconductor thin films has been a big challenge for fundamental research on metastable defective inverse spinel γ-Ga2O3 semiconductors in view of potential device appli…
View article: Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition
Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition Open
Combinatorial pulsed laser deposition (C‐PLD) based on segmented targets has led to new possibilities in the pace of discovery of novel advanced materials with significantly reduced deposition time and material consumption. However, fabric…
View article: Realization of highly rectifying Schottky barrier diodes and <i>pn</i> heterojunctions on <i>κ</i>-Ga2O3 by overcoming the conductivity anisotropy
Realization of highly rectifying Schottky barrier diodes and <i>pn</i> heterojunctions on <i>κ</i>-Ga2O3 by overcoming the conductivity anisotropy Open
Novel devices based on orthorhombic κ-Ga2O3 could enable solar blind infrared detection or high-electron mobility transistors with large two-dimensional electron gas densities. Here, we report on the current transport parallel to the growt…
View article: Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates
Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates Open
Deposition of semiconductors on bendable substrates is a crucial step toward flexible circuitry and deposition by a roll-to-roll process. Since most bendable substrates have limited temperature stability (normally degradation starts betwee…
View article: Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions
Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions Open
We present electrical properties of Schottky barrier diodes on room-temperature deposited amorphous zinc-tin-oxide (ZTO) with Zn/(Zn + Sn) contents between 0.12 and 0.72. A combinatorial approach with continuous composition spread pulsed l…
View article: Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition
Influence of the Cation Ratio on Optical and Electrical Properties of Amorphous Zinc-Tin-Oxide Thin Films Grown by Pulsed Laser Deposition Open
Continuous composition spread (CCS) methods allow fast and economic exploration of composition dependent properties of multielement compounds. Here, a CCS method was applied for room temperature pulsed laser deposition (PLD) of amorphous z…
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Amorphous indium gallium zinc oxide (a-IGZO) has shown promise as the active layer of transparent thin fi lm transistors (TTFTs).Within a-IGZO fi lms, disorder-induced subgap states can form that both reduce the optical transparency and pe…