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View article: GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources
GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources Open
Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of GaN QDs on AlN is achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflecti…
View article: Catalyst Interaction in Unitized Regenerative Fuel Cells
Catalyst Interaction in Unitized Regenerative Fuel Cells Open
Unitized regenerative fuel cells have emerged as promising energy conversion and storage systems for various applications. However, in order to optimize their efficiency, it is crucial to enhance the performance of the bifunctional catalys…
View article: Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates
Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates Open
AlN layers annealed at high temperatures offer low threading dislocation densities of mid 108 cm−2 and are therefore increasingly used as base layers in ultraviolet (UV) light emitting diode (LED) heterostructure growth. These LEDs, just l…
View article: Interaction of Catalysts for Unitized Regenerative Fuel Cells
Interaction of Catalysts for Unitized Regenerative Fuel Cells Open
Unitized regenerative fuel cells have emerged as promising energy conversion and storage systems for various applications. However, in order to optimize their efficiency, it is crucial to enhance the performance of the bifunctional catalys…
View article: Sputter Epitaxy of AlN and GaN on Si(111)
Sputter Epitaxy of AlN and GaN on Si(111) Open
Sputter epitaxy is a low‐cost process suited for the deposition of group‐III‐nitride semiconductors and allowing the deposition on large substrate areas at lower growth temperatures than in metal–organic vapor phase epitaxy (MOVPE). High‐q…
View article: Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties
Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties Open
We report on the formation process of GaN/AlN quantum dots (QDs) which arises after the deposition of 1–2 monolayers of GaN on an AlN/sapphire template followed by a distinct growth interruption (GRI). The influence of the duration of a GR…
View article: Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy
Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy Open
We present a pulsed reactive magnetron sputter process for high quality AlN on Si (1 1 1) beneficially avoiding any high-temperature growth. Initially, metallic aluminium with a nominal thickness of about one monolayer is deposited at a su…
View article: Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN
Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN Open
Freshly introduced a-screw dislocations in gallium nitride are an effective source of ultraviolet radiation, characterized by intense emission of narrow luminescence doublet lines in the spectral range of 3.1-3.2 eV. Furthermore, an additi…
View article: Intensive luminescence from a thick, indium-rich In<sub>0.7</sub>Ga<sub>0.3</sub>N film
Intensive luminescence from a thick, indium-rich In<sub>0.7</sub>Ga<sub>0.3</sub>N film Open
An In 0.7 Ga 0.3 N layer with a thickness of 300 nm deposited on GaN/sapphire template by molecular beam epitaxy has been investigated by highly spatially resolved cathodoluminescence (CL). High crystal film quality without phase separatio…
View article: Vorschau: Chem. Ing. Tech. 9/2017
Vorschau: Chem. Ing. Tech. 9/2017 Open
Unter anderem gibt Karim Ghaib in seiner Arbeit einen U ¨berblick u ¨ber anorganische und organische Phasenwechselmaterialien (PCMs), die ha ¨ufig in Wa ¨rmespeichersystemen angewendet werden.Techniken zur Verbesserung ihrer thermophysikal…
View article: Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers
Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers Open
Journal Article Nanometer-scale Resolved Cathodoluminescence Imaging: New Insights into GaAs/AlGaAs Core-shell Nanowire Lasers Get access Marcus Müller, Marcus Müller Institute of Experimental Physics, Otto-von-Guericke-University Magdebur…
View article: Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures
Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures Open
Journal Article Quantitative STEM: Comparative Studies of Composition and Optical Properties of Semiconductor Quantum Structures Get access Andreas Rosenauer, Andreas Rosenauer Institute of Solid State Physics, University of Bremen, 28359 …
View article: Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates
Selective area growth of AlN/GaN nanocolumns on (0001) and (11–22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates Open
Despite the strong interest in optoelectronic devices working in the deep ultraviolet range, no suitable low cost, large-area, high-quality AlN substrates have been available up to now. The aim of this work is the selective area growth of …
View article: Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires Open
A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited\nfor the fabrication of thin conformal intrawire InGaN nanoshells which host\nquantum dots in nonpolar, semipolar and polar crystal regions. All three\nquantum do…
View article: Analytical electron microscopy characterization of light‐emitting diodes based on ordered <scp>InGaN</scp> nanocolumns
Analytical electron microscopy characterization of light‐emitting diodes based on ordered <span>InGaN</span> nanocolumns Open
Self‐assembled nanocolumns (NCs) with InGaN/GaN disks constitute an alternative to conventional light emitting diodes (LED) planar devices [1]. However, their efficiency and reliability are hindered by a strong dispersion of electrical cha…
View article: Quantitative STEM ‐ From composition to atomic electric fields
Quantitative STEM ‐ From composition to atomic electric fields Open
The image intensity in high‐angle annular dark field STEM images shows a strong chemical sensitivity. As it is also influenced by specimen thickness, crystal orientation as well as characteristics of illumination and detector, a standard‐f…
View article: Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations
Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations Open
Journal Article Nanoscale Cathodoluminescence of an InGaN Single Quantum Well Intersected by Individual Dislocations Get access Gordon Schmidt, Gordon Schmidt Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germa…
View article: Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization Open
Crystal phase quantum dots (CPQD) embedded in a nanowire (NW) geometry have recently emerged as efficient single photon emitters. In typical III–V semiconductor NWs such CPQDs are linked to the well-known zincblende (ZB)/wurtzite (WZ) poly…
View article: Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires Open
This work reports an experimental and theoretical insight into phenomena of two-color emission and different electron-hole recombination dynamics in InGaN nanodisks, incorporated into pencil-like GaN nanowires. The studied nanodisks consis…
View article: Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs
Phosphor‐converted white light from blue‐emitting InGaN microrod LEDs Open
A uniform array of gallium nitride core‐shell microrod (MR) light‐emitting diode (LED) structures was grown by metalorganic vapor phase epitaxy. Defects and the quantum well (QW) luminescence in an individual rod were investigated by scann…