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View article: SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions
SiC Schottky-Barrier Diode without Ion-Implanted P-Type Regions Open
This paper shows results of SiC Schottky diodes fabricated without ion-implanted P-type regions. Diodes with blocking voltages up to 4,500 V are demonstrated utilizing an epitaxial P-type ring with sloped edges for the edge termination. Re…
View article: Ultra-sensitive aptameric field-effect transistor for cortisol sensing
Ultra-sensitive aptameric field-effect transistor for cortisol sensing Open
Existing diagnostic methods for major depressive disorders, emerging mental disorders globally, are restrictive and inaccurate due to the lack of evidence-based assessments. Recent developments incorporating advanced material, micro/nano m…
View article: A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes
A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes Open
The need for efficient power-conversion systems in renewable energy, electric vehicles, and industrial power applications has motivated the development of wide-bandgap power semiconductor devices, such as the SiC Schottky diode. An importa…
View article: Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC
Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC Open
The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the tw…
View article: Low specific contact resistivity nickel to silicon carbide determined using a two contact circular test structure
Low specific contact resistivity nickel to silicon carbide determined using a two contact circular test structure Open
We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and…
View article: Highly Efficient Photon Energy Conversion and Ultrasensitive Self-Powered Photodetection via a Monolithic p-3C-SiC Nanothin Film on p-Si/n-Si Double Junction
Highly Efficient Photon Energy Conversion and Ultrasensitive Self-Powered Photodetection via a Monolithic p-3C-SiC Nanothin Film on p-Si/n-Si Double Junction Open
The pursuit of increased efficiency of photoelectric energy conversion through optimized semiconductor structures remains highly competitive, with current results yet to align with broad expectations. In this study, we discover a significa…
View article: Large thermoelectric effects in p-SiC/p-Si and n-SiC/p-Si heterojunctions
Large thermoelectric effects in p-SiC/p-Si and n-SiC/p-Si heterojunctions Open
The thermoelectric effect is important for thermal sensing, energy harvesting and other applications. This paper investigates the Seebeck coefficient of silicon carbide (SiC) on silicon (Si) heterojunctions and discusses the mechanism unde…
View article: Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients Open
This article explains the mechanisms of negative bias instability in commercial n-channel SiC metal–oxide semiconductor field-effect transistors (MOSFETs) by analysis of transient gate currents. The current–voltage measurements were perfor…
View article: Photovoltaic Effect-Based Multifunctional Photodetection and Position Sensing Using a 3C-SiC/Si Heterojunction
Photovoltaic Effect-Based Multifunctional Photodetection and Position Sensing Using a 3C-SiC/Si Heterojunction Open
With the increasing interest in the photovoltage generation mechanisms in different materials and structures, this study presents the first investigation of multifunctional light detection and position sensing using semiconductor heterojun…
View article: The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents
The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents Open
Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles…
View article: Effect of 3C-SiC Layer Thickness on Lateral Photovoltaic Effect in 3C-SiC/Si Heterojunction
Effect of 3C-SiC Layer Thickness on Lateral Photovoltaic Effect in 3C-SiC/Si Heterojunction Open
In recent years, the lateral photovoltaic effect (LPE) with its unique working mechanism has been explored as an indispensable method for position detection applications. A promising platform for developing self-powered position-sensitive …
View article: Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction
Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction Open
The incorporation of multiphysics stimuli with traditional sensing effects results in an approach for increasing the sensitivity of mechanical sensors, in particular strain sensing. This paper reports on the giant piezotronic effect in a p…
View article: A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor
A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor Open
A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal–semiconductor field effect transistor architecture with a h…
View article: Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration
Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration Open
It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper report…
View article: Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor
Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor Open
We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor. We observe that the HEMT drain …
View article: A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique
A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique Open
This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grow…
View article: 3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect
3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect Open
Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the s…
View article: The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications
The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications Open
In this paper, we derive the equations for the current-voltage characteristics of SiC Schottky barrier diodes from the fundamental physics of thermionic emission and tunneling, as the two fundamental current mechanisms. An excellent fit be…
View article: A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors Open
In this paper we report temperature independent near-interface traps (NITs) in the gate oxide of N-type MOS capacitors. The measurements were performed by a recently developed direct-measurement technique, which detected NITs with energy l…
View article: Photoresponse of a Highly-Rectifying 3C-SiC/Si Heterostructure Under UV and Visible Illuminations
Photoresponse of a Highly-Rectifying 3C-SiC/Si Heterostructure Under UV and Visible Illuminations Open
In this letter, we report the photo-characteristics of an n-3C-Silicon carbide (SiC)/p-Si heterojunction under ultraviolet (UV) and visible illuminations. The 3C-SiC thin film has been grown on Si (100) substrate by a low pressure chemical…
View article: Electromagnetic interference (EMI) analysis on surface roughness of 3c-silicon carbide (3C-SiC) deposited on silicon (Si) substrate
Electromagnetic interference (EMI) analysis on surface roughness of 3c-silicon carbide (3C-SiC) deposited on silicon (Si) substrate Open
Electronic devices may produce undesirable electromagnetic (EM) interference which can degrade the system performance and also affect human health. In this paper, the potential property of 3C-Silicon Carbide (3C-SiC) as the microwave absor…
View article: Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors
Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-SiC MOS Capacitors Open
This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the exist…