Philipp Staudinger
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View article: Long indium-rich InGaAs nanowires by SAG-HVPE
Long indium-rich InGaAs nanowires by SAG-HVPE Open
We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μ m h −1 and high aspect ratio NWs were obtained. Composition along t…
View article: Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy
Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy Open
In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved thr…
View article: Semiconductor Epitaxy in Superconducting Templates
Semiconductor Epitaxy in Superconducting Templates Open
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nano…
View article: Polarity Control in Ge Nanowires by Electronic Surface Doping
Polarity Control in Ge Nanowires by Electronic Surface Doping Open
The performance of nanoscale electronic and photonic devices critically depends on the size and geometry and may significantly differ from those of their bulk counterparts. Along with confinement effects, the inherently high surface-to-vol…
View article: Ge quantum wire memristor
Ge quantum wire memristor Open
Despite being known of for decades, the actual realization of memory devices based on the memristive effect is progressing slowly, due to processing requirements and the need for exotic materials which are not compatible with today’s compl…
View article: Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures
Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures Open
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wi…
View article: Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices
Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices Open
Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient l…
View article: Spatially resolved thermoelectric effects in<i>operando</i>semiconductor–metal nanowire heterostructures
Spatially resolved thermoelectric effects in<i>operando</i>semiconductor–metal nanowire heterostructures Open
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy.
View article: Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100) Open
We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised so…
View article: Crystal Phase Tuning in Planar Films of III-V Semiconductors
Crystal Phase Tuning in Planar Films of III-V Semiconductors Open
We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific g…
View article: III-V Vertical Nanowires Grown on Si by Template-assisted Selective Epitaxy for Tandem Solar Cells
III-V Vertical Nanowires Grown on Si by Template-assisted Selective Epitaxy for Tandem Solar Cells Open
We demonstrate a growth approach that enables connecting III-V nanowires with precise control of shape, position and size by standard Si nanofabrication techniques to a bottom silicon solar cell for the next generation of photovoltaics.
View article: Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes
Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes Open
Recent research on nanowires (NWs) demonstrated the ability of III-V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Contro…
View article: Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures
Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al–Ge–Al Nanowire Heterostructures Open
Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued…