Philippe Schieffer
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View article: Efficient integration of self-assembled organic monolayer tunnel barriers in large area pinhole-free magnetic tunnel junctions
Efficient integration of self-assembled organic monolayer tunnel barriers in large area pinhole-free magnetic tunnel junctions Open
Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at ferroma…
View article: Photoelectron diffraction of twisted bilayer graphene
Photoelectron diffraction of twisted bilayer graphene Open
View article: Photoelectron diffraction of twisted bilayer graphene
Photoelectron diffraction of twisted bilayer graphene Open
Photoelectron diffraction (PED) is a powerful spectroscopic technique that combines elemental resolution with a high sensitivity to the local atomic arrangement at crystal surfaces, thus providing unique fingerprints of selected atomic sit…
View article: Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers
Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers Open
We report on spin atomistic calculations used to model static and dynamic\nmagnetic properties of inhomogeneous ultrathin iron films. Active magnetic\nlayers in next-generation spintronic devices are becoming so thin that they\nexhibit som…
View article: Voltage‐Driven Fluorine Motion for Novel Organic Spintronic Memristor
Voltage‐Driven Fluorine Motion for Novel Organic Spintronic Memristor Open
Integrating tunneling magnetoresistance (TMR) effect in memristors is a long‐term aspiration because it allows to realize multifunctional devices, such as multi‐state memory and tunable plasticity for synaptic function. However, the report…
View article: Carrier-Density Control of the Quantum-Confined <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>1</mml:mn><mml:mi>T</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>TiSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> Charge Density Wave
Carrier-Density Control of the Quantum-Confined Charge Density Wave Open
Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1T-TiSe_{2} induc…
View article: Carrier-Density Control of the Quantum-Confined 1$T$-TiSe$_2$ Charge-Density-Wave
Carrier-Density Control of the Quantum-Confined 1$T$-TiSe$_2$ Charge-Density-Wave Open
Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1$T$-TiSe$_2$ ind…
View article: Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics
Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics Open
Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfid…
View article: Luminescence in undoped and Nb-doped SrTiO3 crystals: Bulk and surface emission
Luminescence in undoped and Nb-doped SrTiO3 crystals: Bulk and surface emission Open
Producción Científica
View article: Energy dependence of interference phenomena in the forward-scattering regime of photoelectron diffraction
Energy dependence of interference phenomena in the forward-scattering regime of photoelectron diffraction Open
View article: Simple renormalization schemes for multiple scattering series expansions
Simple renormalization schemes for multiple scattering series expansions Open
Renormalization schemes for improving the convergence of multiple scattering series expansions are studied. Numerical tests on a small Cu(111) cluster show that convergence rates can double or even that a divergent series can eventually co…
View article: Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties
Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties Open
Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid st…
View article: Origin of weak Fermi level pinning at the graphene/silicon interface
Origin of weak Fermi level pinning at the graphene/silicon interface Open
International audience
View article: Schottky barrier formation at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Fe</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>(001) interface: Influence of oxygen vacancies and layer oxidation
Schottky barrier formation at the(001) interface: Influence of oxygen vacancies and layer oxidation Open
International audience
View article: Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation Open
Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van d…
View article: A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions
A low Schottky barrier height and transport mechanism in gold–graphene–silicon (001) heterojunctions Open
ResiScope mapping showing the strong reduction of resistance induced by a graphene sheet inserted between silicon and gold.
View article: Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures
Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures Open
Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, …
View article: Bias Dependence of the Electrical Spin Injection into GaAs from <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Co</mml:mi><mml:mtext>−</mml:mtext><mml:mi>Fe</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">B</mml:mi><mml:mo>/</mml:mo><mml:mi>MgO</mml:mi></mml:mrow></mml:math> Injectors with Different MgO Growth Processes
Bias Dependence of the Electrical Spin Injection into GaAs from Injectors with Different MgO Growth Processes Open
International audience
View article: Band Bending in Mg-Colored and O<sub>2</sub>-Activated Ultrathin MgO(001) Films
Band Bending in Mg-Colored and O<sub>2</sub>-Activated Ultrathin MgO(001) Films Open
Ultrathin MgO films grown on Ag(001) have been investigated using X-ray and ultraviolet photoemission spectroscopies for oxide films successively exposed to Mg and O2 flux. Studying work functions and layer-resolved Auger shifts allows us …