Pia Maria Düring
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View article: N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO <sub>2</sub>
N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO <sub>2</sub> Open
The current market launch of HfO 2 ‐based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase b…
View article: Ge$_{1-x}$Si$_{x}$ single crystals for Ge hole spin qubit integration
Ge$_{1-x}$Si$_{x}$ single crystals for Ge hole spin qubit integration Open
Spin qubits are fundamental building blocks of modern quantum computing devices. The path of Ge-based hole-spin qubits has several advantages over Si-based electron-spin systems, such as the absence of valley band degeneracy, the possibili…
View article: Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study
Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study Open
Aluminum scandium nitride (Al 1− x Sc x N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the pola…
View article: Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study Open
Aluminum scandium nitride (Al$_{1-x}$Sc$_x$N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the p…
View article: Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO<sub>3</sub> Interfaces
Tunable 2D Electron‐ and 2D Hole States Observed at Fe/SrTiO<sub>3</sub> Interfaces Open
Oxide electronics provide the key concepts and materials for enhancing silicon‐based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic…
View article: Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces
Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO$_3$ Interfaces Open
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic…
View article: Growth-sequence-dependent interface magnetism of SrIrO3–La0.7Sr0.3MnO3 bilayers
Growth-sequence-dependent interface magnetism of SrIrO3–La0.7Sr0.3MnO3 bilayers Open
Bilayers of the oxide 3d ferromagnet La0.7Sr0.3MnO3 (LSMO) and the 5d paramagnet SrIrO3 (SIO) with large spin–orbit coupling (SOC) have been investigated regarding the impact of interfacial SOC on magnetic order. For the growth sequence of…
View article: Growth-sequence-dependent interface magnetism of SrIrO$_3$ - La$_{0.7}$Sr$_{0.3}$MnO$_3$ bilayers
Growth-sequence-dependent interface magnetism of SrIrO$_3$ - La$_{0.7}$Sr$_{0.3}$MnO$_3$ bilayers Open
Bilayers of the oxide 3d ferromagnet La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) and the 5d paramagnet SrIrO$_{3}$ (SIO) with large spin-orbit coupling (SOC) have been investigated regarding the impact of interfacial SOC on magnetic order. For th…