Preston T. Webster
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View article: Degradation of minority carrier lifetime and performance of mid-wave infrared GaInAsSbBi <i>n</i>B<i>n</i> photodetectors as a function of 63 MeV proton irradiation
Degradation of minority carrier lifetime and performance of mid-wave infrared GaInAsSbBi <i>n</i>B<i>n</i> photodetectors as a function of 63 MeV proton irradiation Open
Alloys of GaInAsSbBi are grown by molecular beam epitaxy with various Bi compositions and subjected to a collimated beam of 63 MeV protons. Photoluminescence structures are used to evaluate the material’s minority carrier lifetime damage f…
View article: Sensitivity assessment of 4.8 <i>μ</i>m cutoff GaInAsSbBi <i>nBn</i> photodetectors for mid-wave infrared sensing applications
Sensitivity assessment of 4.8 <i>μ</i>m cutoff GaInAsSbBi <i>nBn</i> photodetectors for mid-wave infrared sensing applications Open
GaInAsSbBi nBn photodetectors are grown lattice-matched on GaSb by molecular beam epitaxy. Device structures exhibit smooth surface morphologies, minority carrier lifetimes on the order of 0.5 μs at 130 K, and demonstrate a 4.8 μm waveleng…
View article: Obtaining accurate spectral response measurements of a semiconductor-based photon detector with an FTIR: Properly correcting for the pyroelectric reference detector frequency response
Obtaining accurate spectral response measurements of a semiconductor-based photon detector with an FTIR: Properly correcting for the pyroelectric reference detector frequency response Open
Pyroelectric detectors are commonly used as the reference detector when measuring a photon detector’s spectral response using a Fourier-transform infrared (FTIR) spectrometer because their fundamental spectral response is independent of wa…
View article: Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 <i>μ</i>m
Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 <i>μ</i>m Open
GaInAsSbBi alloys are grown lattice-matched on GaSb by molecular beam epitaxy demonstrating smooth surface morphologies, >5 μm wavelength photoluminescence emission, and minority carrier lifetimes >1 μs. At a growth temperature of 40…
View article: Analytic modeling of sensitivity in diffusion-limited type-II superlattice mid-wave infrared <i>n</i>B<i>n</i> photodetectors for design optimization for low-irradiance conditions
Analytic modeling of sensitivity in diffusion-limited type-II superlattice mid-wave infrared <i>n</i>B<i>n</i> photodetectors for design optimization for low-irradiance conditions Open
An analytical model for diffusion-limited detector sensitivity under low-irradiance conditions is derived from carrier continuity equations and verified with Silvaco TCAD drift-diffusion software. The model is used to determine the optimal…
View article: DC characteristics of a dynamic vision sensor's photoreceptor circuit evaluated for event-based sensing in the mid-wave infrared
DC characteristics of a dynamic vision sensor's photoreceptor circuit evaluated for event-based sensing in the mid-wave infrared Open
Forthcoming infrared event-based sensors will have utility in the space-based surveillance domain where they could potentially perform traditional sensing and tracking functions with significantly enhanced temporal resolution and reduced d…
View article: Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO
Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO Open
Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these def…
View article: Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing Open
InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of lattice-matched InAsSb at this temperature reflecting a 0.5…
View article: Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data
Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data Open
The semiconductor minority carrier lifetime contains information about several important material properties, including Shockley–Read–Hall defect levels/concentrations and radiative/Auger recombination rates, and the complex relationships …
View article: Minority Carrier Lifetime and Recombination Dynamics in Strain-Balanced InAs/InAsSb and InGaAs/InAsSb superlattices.
Minority Carrier Lifetime and Recombination Dynamics in Strain-Balanced InAs/InAsSb and InGaAs/InAsSb superlattices. Open
View article: Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory
Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory Open
Space is the operating environment of a multitude of systems that our society is heavily reliant on today, however, maintaining operability there necessitates special consideration of the electronic systems' tolerance of space radiation. E…
View article: The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy
The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy Open
A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge tra…
View article: Characterization of Induced Defects in InAsSb from Proton Irradiation using in-situ Lifetime measurements.
Characterization of Induced Defects in InAsSb from Proton Irradiation using in-situ Lifetime measurements. Open
View article: More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques
More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques Open
Techniques that employ positron annihilation spectroscopy are powerful tools to investigate defect structures and concentrations in materials. A hindrance to experimental design and the interpretation of results lies in the lack of agreeme…
View article: Minority Carrier Lifetime and Recombination Dynamics in Strain-Balanced InGaAs/InAsSb Superlattices.
Minority Carrier Lifetime and Recombination Dynamics in Strain-Balanced InGaAs/InAsSb Superlattices. Open
View article: Microwave Based Lifetime Measurements and Analysis for Detector Materials.
Microwave Based Lifetime Measurements and Analysis for Detector Materials. Open
View article: Temperature Dependence of Atomic Ordering and Composition Modulation in Inassbbi Grown by Molecular Beam Epitaxy on GASB Substrates
Temperature Dependence of Atomic Ordering and Composition Modulation in Inassbbi Grown by Molecular Beam Epitaxy on GASB Substrates Open
View article: Potential for neutron and proton transmutation doping of GaN and Ga<sub>2</sub>O<sub>3</sub>
Potential for neutron and proton transmutation doping of GaN and Ga<sub>2</sub>O<sub>3</sub> Open
High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.
View article: Tunable Infrared Pixels via Monolithically Integrated Dynamic Graphene Metasurfaces
Tunable Infrared Pixels via Monolithically Integrated Dynamic Graphene Metasurfaces Open
View article: Impact of proton-induced transmutation doping in semiconductors for space applications
Impact of proton-induced transmutation doping in semiconductors for space applications Open
Proton irradiation typical of detector lifetime in orbit does not change semiconductor chemistry sufficiently through transmutation to alter device performance.
View article: Examination of the Structural Quality of InAsSbBi Epilayers using Cross Section Transmission Electron Microscopy
Examination of the Structural Quality of InAsSbBi Epilayers using Cross Section Transmission Electron Microscopy Open
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View article: Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications
Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications Open
Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with …