PW Leech
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View article: Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC
Effect of low energy implantation on the properties of Ti/Ni/Au contacts to n-SiC Open
The effect of low energy implantation of P or C ions in 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the tw…