Quantong Li
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View article: Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces
Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces Open
We have investigated the interface dislocations in InxGa1−xN/GaN heterostructures (0 ≤ x ≤ 0.20) using diffraction contrast analysis in a transmission electron microscope. The results indicate that the structural properties of interface di…
View article: Transition From Screw Type to Edge Type Misfit Dislocations at InGaN/GaN Heterointerfaces
Transition From Screw Type to Edge Type Misfit Dislocations at InGaN/GaN Heterointerfaces Open
We have investigated the interfacial dislocations in InxGa1–xN/GaN (0 ≤ x ≤ 0.20) heterostructures using diffraction contrast analysis in a transmission electron microscopy. The analysis indicate that the structural properties of the inter…
View article: Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching
Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching Open
We report the Cl-based inductively coupled plasma etching of N-polar Al(Ga)N layers obtained from layer transfer. It is found that debris appeared on the etched N-polar surface after exposing in air for a short period whereas the etched Al…
View article: Study on Very high-cycle Bending Vibration Fatigue Performance of TC17 Titanium Alloys under Corrosion and Laser Shock Processing
Study on Very high-cycle Bending Vibration Fatigue Performance of TC17 Titanium Alloys under Corrosion and Laser Shock Processing Open
In this paper, the very high-cycle fatigue performance of TC17 titanium alloys under corrosion environment and laser shock was studied by the load of first-order bending vibration. The results show that the very high cycle fatigue performa…
View article: Strain relaxation in InGaN/GaN herostructures
Strain relaxation in InGaN/GaN herostructures Open
In this work, we have investigated the strain relaxation of InGaN layers grown on GaN templates by MOVPE and PAMBE using TEM. To this end we varied the indium composition from 4.1% to pure indium nitride and the corresponding mismatch was …