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View article: Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics
Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics Open
In recent years, aluminum nitride (AlN) has emerged as an attractive material for integrated photonics due to its low propagation losses, wide transparency window, and presence of both second- and third-order optical nonlinearities. Howeve…
View article: VN–VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells
VN–VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells Open
In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particu…
View article: Quantifying carbon site switching dynamics in GaN by electron holography
Quantifying carbon site switching dynamics in GaN by electron holography Open
Off-axis electron holography is utilized to identify point defect reactions and quantify their dynamics by probing the time and temperature dependence of the Fermi level upon annealing. The methodology is illustrated using implanted carbon…
View article: Thermal analysis of GaN-based photonic membranes for optoelectronics
Thermal analysis of GaN-based photonic membranes for optoelectronics Open
Semiconductor membranes find their widespread use in various research fields targeting medical, biological, environmental, and optical applications. Often such membranes derive their functionality from an inherent nanopatterning, which ren…
View article: Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode
Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode Open
We present a butt-coupled InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV rang…
View article: Miniaturisation d'une diode laser InGaN à faible largeur de raie par contre réaction optique d'un réseau de Bragg fibré pour la gamme du bleu et du proche ultraviolet
Miniaturisation d'une diode laser InGaN à faible largeur de raie par contre réaction optique d'un réseau de Bragg fibré pour la gamme du bleu et du proche ultraviolet Open
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View article: Origin of giant enhancement of phase contrast in electron holography of modulation-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si43.svg" display="inline" id="d1e166"><mml:mi>n</mml:mi></mml:math>-type GaN
Origin of giant enhancement of phase contrast in electron holography of modulation-doped -type GaN Open
The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions.…
View article: Sub-20 kHz low frequency noise near ultraviolet miniature external cavity laser diode
Sub-20 kHz low frequency noise near ultraviolet miniature external cavity laser diode Open
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and…
View article: Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry Open
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking microphotoluminescence spectroscopy with Raman thermometry and other spectroscop…
View article: Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography Open
Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 °C. The healing processes result in an irreversibl…
View article: Sub-20 kHz Low Frequency Noise Near Ultraviolet Miniature External Cavity Laser Diode
Sub-20 kHz Low Frequency Noise Near Ultraviolet Miniature External Cavity Laser Diode Open
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range. We…
View article: Sub-20 kHz Low Frequency Noise Near Ultraviolet Miniature External Cavity Laser Diode
Sub-20 kHz Low Frequency Noise Near Ultraviolet Miniature External Cavity Laser Diode Open
We present a compact InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range. We…
View article: Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities Open
In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect densi…
View article: LASPE - GaN quantum dots dataset
LASPE - GaN quantum dots dataset Open
This repository contains all data used in the following publications: ACS Photonics 7, 1515 (2020) Light Sci Appl 11, 114 (2022) All data are saved as text files. Except for TRPL measurements, all filenames are composed as follows: Publica…
View article: LASPE - GaN quantum dots dataset
LASPE - GaN quantum dots dataset Open
This repository contains all data used in the following publications: ACS Photonics 7, 1515 (2020) Light Sci Appl 11, 114 (2022) All data are saved as text files. Except for TRPL measurements, all filenames are composed as follows: Publica…
View article: Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry Open
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstr…
View article: Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells Open
Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in mi…
View article: Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells Open
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in mi…
View article: Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots Open
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs f…
View article: Single photon emission and recombination dynamics in self-assembled\n GaN/AlN quantum dots
Single photon emission and recombination dynamics in self-assembled\n GaN/AlN quantum dots Open
III-nitride quantum dots (QDs) are a promising system actively studied for\ntheir ability to maintain single photon emission up to room temperature. Here,\nwe report on the evolution of the emission properties of self-assembled GaN/AlN\nQD…
View article: Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature Open
View article: Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence Open
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs …
View article: Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in <i>c</i>-plane GaN/AlN quantum dots emitting in the UV range
Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in <i>c</i>-plane GaN/AlN quantum dots emitting in the UV range Open
c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insigh…
View article: Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces Open
We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calcula…
View article: Interplay of intrinsic and extrinsic states in pinning and passivation of <i>m</i>-plane facets of GaN <i>n</i>-<i>p</i>-<i>n</i> junctions
Interplay of intrinsic and extrinsic states in pinning and passivation of <i>m</i>-plane facets of GaN <i>n</i>-<i>p</i>-<i>n</i> junctions Open
Intrinsic and extrinsic pinning and passivation of m-plane cleavage facets of GaN n-p-n junctions were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. On freshly cleaved and clean p-type GaN(101¯0) surfaces,…
View article: Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides
Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides Open
Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polar…
View article: Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer Open
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the pr…
View article: Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers Open
View article: Impact of defects on Auger recombination in <i>c</i>-plane InGaN/GaN single quantum well in the efficiency droop regime
Impact of defects on Auger recombination in <i>c</i>-plane InGaN/GaN single quantum well in the efficiency droop regime Open
We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is cont…
View article: Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon Open
Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 …