Roland Püsche
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View article: High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications Open
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) b…
View article: Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment Open
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specificall…
View article: Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures Open
Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing …
View article: Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment Open
International audience
View article: Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V Open
International audience
View article: GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current Open
In this work an extensive analysis on the leakage current of three samples obtained by stopping the epitaxial growth of a GaN-on-Silicon stack is presented. We studied the current leakage behavior and the breakdown voltage as a function of…
View article: Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications Open
International audience